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Trabalho de evento-resumo
Interference effects in a nonplanar wires with a two-dimensional electron GAS (1997)
Basmaji, Pierre; Gusev, G M; La Scala Junior, N; Maude, D K; Portal, J C; Lubyshev, D I; Silva, M P A; González-Borrero, P P; Rossi, J C
Source: Abstracts. Conference titles: International Conference on Superlattices, Microructures, and Microdevices. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
BASMAJI, Pierre et al. Interference effects in a nonplanar wires with a two-dimensional electron GAS. 1997, Anais.. Lincoln: University of Nebraska, 1997. . Acesso em: 05 nov. 2024.
APA
Basmaji, P., Gusev, G. M., La Scala Junior, N., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1997). Interference effects in a nonplanar wires with a two-dimensional electron GAS. In Abstracts. Lincoln: University of Nebraska.
NLM
Basmaji P, Gusev GM, La Scala Junior N, Maude DK, Portal JC, Lubyshev DI, Silva MPA, González-Borrero PP, Rossi JC. Interference effects in a nonplanar wires with a two-dimensional electron GAS. Abstracts. 1997 ;[citado 2024 nov. 05 ]
Vancouver
Basmaji P, Gusev GM, La Scala Junior N, Maude DK, Portal JC, Lubyshev DI, Silva MPA, González-Borrero PP, Rossi JC. Interference effects in a nonplanar wires with a two-dimensional electron GAS. Abstracts. 1997 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Chaotic dynamics of ballistic electrons on a single elliptically-shaped antidot (1996)
Kleber, X; Gusev, G M; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Basmaji, Pierre; Silva, M P A; Rossi, J C; Nastaushev, Y V
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
KLEBER, X et al. Chaotic dynamics of ballistic electrons on a single elliptically-shaped antidot. 1996, Anais.. Berlin: Technische Universitat Berlin, 1996. . Acesso em: 05 nov. 2024.
APA
Kleber, X., Gusev, G. M., Gennser, U., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1996). Chaotic dynamics of ballistic electrons on a single elliptically-shaped antidot. In Abstracts. Berlin: Technische Universitat Berlin.
NLM
Kleber X, Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva MPA, Rossi JC, Nastaushev YV. Chaotic dynamics of ballistic electrons on a single elliptically-shaped antidot. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Kleber X, Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva MPA, Rossi JC, Nastaushev YV. Chaotic dynamics of ballistic electrons on a single elliptically-shaped antidot. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Percolation network in an artificial, smooth potential due to mixing between edge states (1996)
Gusev, G M; Silva, M P A; Rossi, J C; Nastaushev, Y V; Kleber, X; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
GUSEV, G M et al. Percolation network in an artificial, smooth potential due to mixing between edge states. 1996, Anais.. Berlin: Technische Universitat Berlin, 1996. . Acesso em: 05 nov. 2024.
APA
Gusev, G. M., Silva, M. P. A., Rossi, J. C., Nastaushev, Y. V., Kleber, X., Gennser, U., et al. (1996). Percolation network in an artificial, smooth potential due to mixing between edge states. In Abstracts. Berlin: Technische Universitat Berlin.
NLM
Gusev GM, Silva MPA, Rossi JC, Nastaushev YV, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P. Percolation network in an artificial, smooth potential due to mixing between edge states. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Gusev GM, Silva MPA, Rossi JC, Nastaushev YV, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P. Percolation network in an artificial, smooth potential due to mixing between edge states. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots (1996)
Silva, S W; Pusep, Yuri A ; Galzerani, J C; Lubyshev, D I; González-Borrero, P P; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
SILVA, S W et al. Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. 1996, Anais.. Berlin: Technische Universitat Berlin, 1996. . Acesso em: 05 nov. 2024.
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1996). Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. In Abstracts. Berlin: Technische Universitat Berlin.
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices (1996)
Pusep, Yuri A ; Silva, S. W.; Galzerani, J. C.; Lubyshev, D. I.; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Raman Spectroscopy. Unidade: IFSC
Assunto: FÍSICA
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ABNT
PUSEP, Yuri A et al. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. 1996, Anais.. Pittsburg: Instituto de Física de São Carlos, Universidade de São Paulo, 1996. . Acesso em: 05 nov. 2024.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1996). Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. In Abstracts. Pittsburg: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)A/B and (100) 'GA''AS' substrates (1996)
Marega Junior, Euclydes ; González-Borrero, Pedro Pablo; Lubyshev, D I; Petitprez, Emmanuel; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Superlattices, Microructures and Microdevices. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
MAREGA JUNIOR, Euclydes et al. Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)A/B and (100) 'GA''AS' substrates. 1996, Anais.. Liebe: Instituto de Física de São Carlos, Universidade de São Paulo, 1996. . Acesso em: 05 nov. 2024.
APA
Marega Junior, E., González-Borrero, P. P., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1996). Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)A/B and (100) 'GA''AS' substrates. In Abstracts. Liebe: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Marega Junior E, González-Borrero PP, Lubyshev DI, Petitprez E, Basmaji P. Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)A/B and (100) 'GA''AS' substrates. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Marega Junior E, González-Borrero PP, Lubyshev DI, Petitprez E, Basmaji P. Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)A/B and (100) 'GA''AS' substrates. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high index oriented 'GA''AS' (1996)
González-Borrero, P P; Marega Junior, Euclydes ; Lubyshev, D I; Petitprez, E; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
GONZÁLEZ-BORRERO, P P et al. Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high index oriented 'GA''AS'. 1996, Anais.. Berlin: Technische Universitat Berlin, 1996. . Acesso em: 05 nov. 2024.
APA
González-Borrero, P. P., Marega Junior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1996). Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high index oriented 'GA''AS'. In Abstracts. Berlin: Technische Universitat Berlin.
NLM
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high index oriented 'GA''AS'. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Vancouver
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high index oriented 'GA''AS'. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Aharonov-bohm effect in a cylindrical two-dimensional electron gas grown over free standing wires (1996)
Gusev, G M; Scala Junior, N; Lubyshev, D I; González-Borrero, P P; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
GUSEV, G M et al. Aharonov-bohm effect in a cylindrical two-dimensional electron gas grown over free standing wires. 1996, Anais.. Berlin: Technische Universitat Berlin, 1996. . Acesso em: 05 nov. 2024.
APA
Gusev, G. M., Scala Junior, N., Lubyshev, D. I., González-Borrero, P. P., Silva, M. de A. P. da, Rossi, J. C., & Basmaji, P. (1996). Aharonov-bohm effect in a cylindrical two-dimensional electron gas grown over free standing wires. In Abstracts. Berlin: Technische Universitat Berlin.
NLM
Gusev GM, Scala Junior N, Lubyshev DI, González-Borrero PP, Silva M de AP da, Rossi JC, Basmaji P. Aharonov-bohm effect in a cylindrical two-dimensional electron gas grown over free standing wires. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Gusev GM, Scala Junior N, Lubyshev DI, González-Borrero PP, Silva M de AP da, Rossi JC, Basmaji P. Aharonov-bohm effect in a cylindrical two-dimensional electron gas grown over free standing wires. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Surface kinetics effects at the mbe growth of iii-v compounds (1995)
Lubyshev, D I; González-Borrero, P P; Marega Junior, Euclydes ; Lubysheva, T B; La Scala Junior, N; Basmaji, Pierre
Source: Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
LUBYSHEV, D I et al. Surface kinetics effects at the mbe growth of iii-v compounds. 1995, Anais.. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Lubyshev, D. I., González-Borrero, P. P., Marega Junior, E., Lubysheva, T. B., La Scala Junior, N., & Basmaji, P. (1995). Surface kinetics effects at the mbe growth of iii-v compounds. In Abstracts. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Lubyshev DI, González-Borrero PP, Marega Junior E, Lubysheva TB, La Scala Junior N, Basmaji P. Surface kinetics effects at the mbe growth of iii-v compounds. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Lubyshev DI, González-Borrero PP, Marega Junior E, Lubysheva TB, La Scala Junior N, Basmaji P. Surface kinetics effects at the mbe growth of iii-v compounds. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures (1995)
Guimarães, Francisco Eduardo Gontijo ; González-Borrero, P P; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: CIRCUITOS ELETRÔNICOS, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures. 1995, Anais.. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Guimarães, F. E. G., González-Borrero, P. P., Lubyshev, D. I., & Basmaji, P. (1995). Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures. In Abstracts. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Guimarães FEG, González-Borrero PP, Lubyshev DI, Basmaji P. Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Guimarães FEG, González-Borrero PP, Lubyshev DI, Basmaji P. Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices (1995)
Silva, S W; Pusep, Yuri A ; Galzerani, J C; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), MATÉRIA CONDENSADA
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ABNT
SILVA, S W et al. Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices. 1995, Anais.. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices. In Abstracts. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Random magnetic field and weak localization effects in a dimpled 2D electron gas (1995)
Gusev, G. M.; Lubyshev, D. I.; Rossi, J. C.; La Scala Junior, N.; Gennser, U.; Kleber, X.; Maude, D. K.; Portal, J. C.; Basmaji, Pierre; Silva, Marcelo de Assumpção Pereira da ; Nastaushev, Yu V.
Source: Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
GUSEV, G. M. et al. Random magnetic field and weak localization effects in a dimpled 2D electron gas. 1995, Anais.. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Gusev, G. M., Lubyshev, D. I., Rossi, J. C., La Scala Junior, N., Gennser, U., Kleber, X., et al. (1995). Random magnetic field and weak localization effects in a dimpled 2D electron gas. In Abstracts. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Gusev GM, Lubyshev DI, Rossi JC, La Scala Junior N, Gennser U, Kleber X, Maude DK, Portal JC, Basmaji P, Silva M de AP da, Nastaushev YV. Random magnetic field and weak localization effects in a dimpled 2D electron gas. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Gusev GM, Lubyshev DI, Rossi JC, La Scala Junior N, Gennser U, Kleber X, Maude DK, Portal JC, Basmaji P, Silva M de AP da, Nastaushev YV. Random magnetic field and weak localization effects in a dimpled 2D electron gas. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices (1995)
Pusep, Yuri A ; Silva, S.; Galzerani, J. C.; Lubyshev, D. I.; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Assunto: FÍSICA
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ABNT
PUSEP, Yuri A et al. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Pusep, Y. A., Silva, S., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Silva S, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Pusep YA, Silva S, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures (1995)
Guimarães, Francisco Eduardo Gontijo ; Lubyshev, D.; Chitta, V. A.; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Assunto: FÍSICA
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Guimarães, F. E. G., Lubyshev, D., Chitta, V. A., & Basmaji, P. (1995). Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Guimarães FEG, Lubyshev D, Chitta VA, Basmaji P. Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Guimarães FEG, Lubyshev D, Chitta VA, Basmaji P. Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Luminescence centers in porous silicon (1995)
Pattaro, R; Matvienko, B; Guimaraes, F; Basmaji, Pierre
Source: Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PATTARO, R et al. Luminescence centers in porous silicon. 1995, Anais.. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Pattaro, R., Matvienko, B., Guimaraes, F., & Basmaji, P. (1995). Luminescence centers in porous silicon. In Abstracts. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pattaro R, Matvienko B, Guimaraes F, Basmaji P. Luminescence centers in porous silicon. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Pattaro R, Matvienko B, Guimaraes F, Basmaji P. Luminescence centers in porous silicon. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice (1995)
Basmaji, Pierre; Gusev, G.; Lubyshev, D. I.; Silva, S. W.
Source: Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Assunto: FÍSICA
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ABNT
BASMAJI, Pierre et al. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Basmaji, P., Gusev, G., Lubyshev, D. I., & Silva, S. W. (1995). Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices (1995)
Pusep, Yuri A ; Silva, S. W.; Galzerani, J. C.; Lubyshev, D. I.; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Solid Surface. Unidade: IFSC
Assunto: POLÍMEROS (MATERIAIS)
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ABNT
PUSEP, Yuri A et al. Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices. 1995, Anais.. Birmingham: Institute of Physcis-IOP, 1995. . Acesso em: 05 nov. 2024.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices. In Abstracts. Birmingham: Institute of Physcis-IOP.
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices (1995)
Silva, S. W.; Pusep, Yuri A ; Galzerani, J C; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Physics of Low Dimensional Structures. Unidade: IFSC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
SILVA, S. W. et al. Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices. 1995, Anais.. Dubna: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices. In Abstracts. Dubna: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI' (1994)
Silva, S W; Pizani, P S; Rossi, J C; Galzerani, J C; Mlayah, A; Carles, R; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, S W et al. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. 1994, Anais.. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 05 nov. 2024.
APA
Silva, S. W., Pizani, P. S., Rossi, J. C., Galzerani, J. C., Mlayah, A., Carles, R., et al. (1994). Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. In Abstracts. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Silva SW, Pizani PS, Rossi JC, Galzerani JC, Mlayah A, Carles R, Lubyshev DI, Basmaji P. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. Abstracts. 1994 ;[citado 2024 nov. 05 ]
Vancouver
Silva SW, Pizani PS, Rossi JC, Galzerani JC, Mlayah A, Carles R, Lubyshev DI, Basmaji P. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. Abstracts. 1994 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field (1994)
Gusev, G M; Gennser, U; Maude, D K; Portal, J C; Rossi, J C; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. 1994, Anais.. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 05 nov. 2024.
APA
Gusev, G. M., Gennser, U., Maude, D. K., Portal, J. C., Rossi, J. C., Lubyshev, D. I., & Basmaji, P. (1994). Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. In Abstracts. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Gusev GM, Gennser U, Maude DK, Portal JC, Rossi JC, Lubyshev DI, Basmaji P. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. Abstracts. 1994 ;[citado 2024 nov. 05 ]
Vancouver
Gusev GM, Gennser U, Maude DK, Portal JC, Rossi JC, Lubyshev DI, Basmaji P. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. Abstracts. 1994 ;[citado 2024 nov. 05 ]

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