Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: Rio de Janeiro
- Date published: 1995
- Source:
- Título do periódico: Abstracts
- Conference titles: Brazilian Workshop on Semiconductor Physics
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ABNT
SILVA, S W; PUSEP, Yuri A.; GALZERANI, J C; LUBYSHEV, D I; BASMAJI, Pierre. Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices. Anais.. Rio de Janeiro: [s.n.], 1995. -
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices. In Abstracts. Rio de Janeiro. -
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices. Abstracts. 1995 ; -
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311) a surface found in raman spectra of 'GA'as' / 'al''as' superlattices. Abstracts. 1995 ; - Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Spectroscopy of atomic-scale roughness in the ultrathin-layer 'GA''AS' / 'AL''AS' superlattices
- Charge transfer between percolation levels in a system with an artificial, strongly disordered potential
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Raman scattering of the optical vibrational modes in ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices grown on (311)a and (311)b surfaces
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