Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstracts
- Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD
-
ABNT
BASMAJI, Pierre et al. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 04 out. 2024. -
APA
Basmaji, P., Gusev, G., Lubyshev, D. I., & Silva, S. W. (1995). Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2024 out. 04 ] -
Vancouver
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2024 out. 04 ] - Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Negative magnetoresistance in coupled quantum wells
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