Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice (1995)
- Authors:
- USP affiliated author: BASMAJI, PIERRE - IFSC
- School: IFSC
- Subject: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstracts
- Conference title: International Conference on Low Dimensional Structures and Devices - LDSD
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ABNT
BASMAJI, Pierre et al. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 29 jun. 2022. -
APA
Basmaji, P., Gusev, G., Lubyshev, D. I., & Silva, S. W. (1995). Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2022 jun. 29 ] -
Vancouver
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2022 jun. 29 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
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