Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS' (1992)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC
- Unidades: IFSC
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Solid State Communications
- Volume/Número/Paginação/Ano: v.81, n.4 , p.363-5, 1992
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ABNT
NOTARI, A C; SCHRAPPE, B J; BASMAJI, Pierre. Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Solid State Communications, New York, v. 81, n. 4 , p. 363-5, 1992. -
APA
Notari, A. C., Schrappe, B. J., & Basmaji, P. (1992). Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Solid State Communications, 81( 4 ), 363-5. -
NLM
Notari AC, Schrappe BJ, Basmaji P. Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Solid State Communications. 1992 ;81( 4 ): 363-5. -
Vancouver
Notari AC, Schrappe BJ, Basmaji P. Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Solid State Communications. 1992 ;81( 4 ): 363-5. - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy
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