Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS' (1992)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Solid State Communications
- Volume/Número/Paginação/Ano: v.81, n.4 , p.363-5, 1992
-
ABNT
NOTARI, A C; SCHRAPPE, B J; BASMAJI, Pierre. Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Solid State Communications, New York, v. 81, n. 4 , p. 363-5, 1992. -
APA
Notari, A. C., Schrappe, B. J., & Basmaji, P. (1992). Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Solid State Communications, 81( 4 ), 363-5. -
NLM
Notari AC, Schrappe BJ, Basmaji P. Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Solid State Communications. 1992 ;81( 4 ): 363-5. -
Vancouver
Notari AC, Schrappe BJ, Basmaji P. Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Solid State Communications. 1992 ;81( 4 ): 363-5. - Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Spectroscopy of atomic-scale roughness in the ultrathin-layer 'GA''AS' / 'AL''AS' superlattices
- Charge transfer between percolation levels in a system with an artificial, strongly disordered potential
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Raman scattering of the optical vibrational modes in ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices grown on (311)a and (311)b surfaces
- Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy
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