Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices by raman and fourier transform infrared spectroscopies (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Scientific Program and Abstracts
- Conference titles: Simposio Latino-Americano de Fisica do Estado Solido
-
ABNT
PUSEP, Yuri A. et al. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices by raman and fourier transform infrared spectroscopies. 1995, Anais.. Porto Alegre: Ufrgs, 1995. . Acesso em: 18 abr. 2024. -
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices by raman and fourier transform infrared spectroscopies. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices by raman and fourier transform infrared spectroscopies. Scientific Program and Abstracts. 1995 ;[citado 2024 abr. 18 ] -
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices by raman and fourier transform infrared spectroscopies. Scientific Program and Abstracts. 1995 ;[citado 2024 abr. 18 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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