Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy (1993)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFQSC
- Unidade: IFQSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Usp/Ufscar
- Publisher place: Sao Carlos
- Date published: 1993
- Source:
- Título: Abstracts
- Conference titles: Brazilian School of Semiconductor Physics
-
ABNT
GALZERANI, J C et al. Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy. 1993, Anais.. Sao Carlos: Usp/Ufscar, 1993. . Acesso em: 14 fev. 2026. -
APA
Galzerani, J. C., Pizani, P. S., Rossi, J. C., Lubyshev, D. I., & Basmaji, P. (1993). Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy. In Abstracts. Sao Carlos: Usp/Ufscar. -
NLM
Galzerani JC, Pizani PS, Rossi JC, Lubyshev DI, Basmaji P. Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy. Abstracts. 1993 ;[citado 2026 fev. 14 ] -
Vancouver
Galzerani JC, Pizani PS, Rossi JC, Lubyshev DI, Basmaji P. Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy. Abstracts. 1993 ;[citado 2026 fev. 14 ] - Origem da luminescencia visivel do silicio poroso
- Nano estruturas luminescentes de silicio poroso fabricado pelo processo eletroquimico
- Ions incorporation and exchange effects in porous silicon
- Propriedades opticas e eletricas de silicio poroso
- Characterization of GaAs wire crystals grown on porous silicon by Raman scattering
- Montagem e desenvolvimento de um sistema para a caracterizacao eletrica e otica de filmes e estruturas semicondutoras
- Kinetic modelling of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots
- Influence of crystal-potential fluctuations on Raman spectra of coupled plasmon-Lo-phonon modes in disordered systems
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
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