Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título: Scientific Program and Abstracts
- Conference titles: Simposio Latino-Americano de Fisica do Estado Solido
-
ABNT
LUBYSHEV, D I et al. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. 1995, Anais.. Porto Alegre: Ufrgs, 1995. . Acesso em: 06 maio 2026. -
APA
Lubyshev, D. I., Preobrazhenskii, V. V., Semyagin, B. R., Lubysheva, T. B., La Scala Junior, N., & Basmaji, P. (1995). Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ;[citado 2026 maio 06 ] -
Vancouver
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ;[citado 2026 maio 06 ] - Origem da luminescencia visivel do silicio poroso
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- Kinetic modelling of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots
- Influence of crystal-potential fluctuations on Raman spectra of coupled plasmon-Lo-phonon modes in disordered systems
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices by raman and fourier transform infrared spectroscopies
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