Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Scientific Program and Abstracts
- Conference titles: Simposio Latino-Americano de Fisica do Estado Solido
-
ABNT
LUBYSHEV, D I; PREOBRAZHENSKII, V V; SEMYAGIN, B R; et al. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Anais.. Porto Alegre: Ufrgs, 1995. -
APA
Lubyshev, D. I., Preobrazhenskii, V. V., Semyagin, B. R., Lubysheva, T. B., La Scala Junior, N., & Basmaji, P. (1995). Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ; -
Vancouver
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ; - Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Spectroscopy of atomic-scale roughness in the ultrathin-layer 'GA''AS' / 'AL''AS' superlattices
- Charge transfer between percolation levels in a system with an artificial, strongly disordered potential
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Raman scattering of the optical vibrational modes in ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices grown on (311)a and (311)b surfaces
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