Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy (1995)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC
- Unidades: IFSC
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Ufrgs
- Place of publication: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Scientific Program and Abstracts
- Conference title: Simposio Latino-Americano de Fisica do Estado Solido
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ABNT
LUBYSHEV, D I; PREOBRAZHENSKII, V V; SEMYAGIN, B R; et al. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Anais.. Porto Alegre: Ufrgs, 1995. -
APA
Lubyshev, D. I., Preobrazhenskii, V. V., Semyagin, B. R., Lubysheva, T. B., La Scala Junior, N., & Basmaji, P. (1995). Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ; -
Vancouver
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ; - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
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