Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy (1995)
- Autores:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assuntos: MATÉRIA CONDENSADA; SEMICONDUTORES
- Idioma: Inglês
- Imprenta:
- Editora: Ufrgs
- Local: Porto Alegre
- Data de publicação: 1995
- Fonte:
- Título do periódico: Scientific Program and Abstracts
- Nome do evento: Simposio Latino-Americano de Fisica do Estado Solido
-
ABNT
LUBYSHEV, D I et al. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. 1995, Anais.. Porto Alegre: Ufrgs, 1995. . Acesso em: 19 abr. 2024. -
APA
Lubyshev, D. I., Preobrazhenskii, V. V., Semyagin, B. R., Lubysheva, T. B., La Scala Junior, N., & Basmaji, P. (1995). Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ;[citado 2024 abr. 19 ] -
Vancouver
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ;[citado 2024 abr. 19 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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