Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter (1993)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC
- Unidades: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Usp/Ufscar
- Place of publication: Sao Carlos
- Date published: 1993
- Source:
- Título do periódico: Abstracts
- Conference title: Brazilian School of Semiconductor Physics
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ABNT
GUSEV, G M; BASMAJI, Pierre; LITVIN, L V; NASTAUSHEV, Y V; TOROPOV, A I. Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter. Anais.. Sao Carlos: Usp/Ufscar, 1993. -
APA
Gusev, G. M., Basmaji, P., Litvin, L. V., Nastaushev, Y. V., & Toropov, A. I. (1993). Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter. In Abstracts. Sao Carlos: Usp/Ufscar. -
NLM
Gusev GM, Basmaji P, Litvin LV, Nastaushev YV, Toropov AI. Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter. Abstracts. 1993 ; -
Vancouver
Gusev GM, Basmaji P, Litvin LV, Nastaushev YV, Toropov AI. Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter. Abstracts. 1993 ; - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy
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