Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy (1993)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Português
- Imprenta:
- Publisher: Usp/Ufscar
- Publisher place: Sao Carlos
- Date published: 1993
- Source:
- Título: Abstracts
- Conference titles: Brazilian School of Semiconductor Physics
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ABNT
BERNUSSI, A A et al. Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy. 1993, Anais.. Sao Carlos: Usp/Ufscar, 1993. . Acesso em: 04 ago. 2025. -
APA
Bernussi, A. A., Souza, C. F., Carvalho, W., Lubyshev, D. I., Rossi, J. C., & Basmaji, P. (1993). Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy. In Abstracts. Sao Carlos: Usp/Ufscar. -
NLM
Bernussi AA, Souza CF, Carvalho W, Lubyshev DI, Rossi JC, Basmaji P. Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy. Abstracts. 1993 ;[citado 2025 ago. 04 ] -
Vancouver
Bernussi AA, Souza CF, Carvalho W, Lubyshev DI, Rossi JC, Basmaji P. Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy. Abstracts. 1993 ;[citado 2025 ago. 04 ] - Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Propriedades opticas e eletricas de silicio poroso
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Negative magnetoresistance in coupled quantum wells
- Charge transfer between percolation levels in a system with an artificial , strongly disordered potential
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