Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy (1993)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Crystal Growth
- Volume/Número/Paginação/Ano: v.132, p.533-7, 1993
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ABNT
LUBYSHEV, D I et al. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth, v. 132, p. 533-7, 1993Tradução . . Acesso em: 19 abr. 2024. -
APA
Lubyshev, D. I., Rossi, J. C., Gusev, G. M., & Basmaji, P. (1993). Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth, 132, 533-7. -
NLM
Lubyshev DI, Rossi JC, Gusev GM, Basmaji P. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth. 1993 ;132 533-7.[citado 2024 abr. 19 ] -
Vancouver
Lubyshev DI, Rossi JC, Gusev GM, Basmaji P. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth. 1993 ;132 533-7.[citado 2024 abr. 19 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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