Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy (1993)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Crystal Growth
- Volume/Número/Paginação/Ano: v.132, p.533-7, 1993
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ABNT
LUBYSHEV, D I et al. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth, v. 132, p. 533-7, 1993Tradução . . Acesso em: 31 jul. 2024. -
APA
Lubyshev, D. I., Rossi, J. C., Gusev, G. M., & Basmaji, P. (1993). Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth, 132, 533-7. -
NLM
Lubyshev DI, Rossi JC, Gusev GM, Basmaji P. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth. 1993 ;132 533-7.[citado 2024 jul. 31 ] -
Vancouver
Lubyshev DI, Rossi JC, Gusev GM, Basmaji P. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth. 1993 ;132 533-7.[citado 2024 jul. 31 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
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