Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions (1996)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstract Workbook
- Conference titles: International Conference on Superlattices, Microructures and Microdevices
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ABNT
SILVA, S W et al. Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions. 1996, Anais.. Liege: Instituto de Física de São Carlos, Universidade de São Paulo, 1996. . Acesso em: 13 mar. 2026. -
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1996). Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions. In Abstract Workbook. Liege: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions. Abstract Workbook. 1996 ;[citado 2026 mar. 13 ] -
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions. Abstract Workbook. 1996 ;[citado 2026 mar. 13 ] - Origem da luminescencia visivel do silicio poroso
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