Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions (1996)
- Autores:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Abstract Workbook
- Nome do evento: International Conference on Superlattices, Microructures and Microdevices
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ABNT
SILVA, S W et al. Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions. 1996, Anais.. Liege: Instituto de Física de São Carlos, Universidade de São Paulo, 1996. . Acesso em: 18 abr. 2024. -
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1996). Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions. In Abstract Workbook. Liege: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions. Abstract Workbook. 1996 ;[citado 2024 abr. 18 ] -
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions. Abstract Workbook. 1996 ;[citado 2024 abr. 18 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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