Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots (1996)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Technische Universitat Berlin
- Publisher place: Berlin
- Date published: 1996
- Source:
- Título: Abstracts
- Conference titles: International Conference on the Physics of Semiconductors
-
ABNT
SILVA, S W et al. Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. 1996, Anais.. Berlin: Technische Universitat Berlin, 1996. . Acesso em: 01 out. 2024. -
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1996). Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. In Abstracts. Berlin: Technische Universitat Berlin. -
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. Abstracts. 1996 ;[citado 2024 out. 01 ] -
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP, Basmaji P. Photoluminescence of spin-orbit-split exciton in the self assembled 'IN''AS'and 'IN IND.0.5''GA IND.0.5''AS' quantum dots. Abstracts. 1996 ;[citado 2024 out. 01 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
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