Luminescence centers in porous silicon (1995)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: Rio de Janeiro
- Date published: 1995
- Source:
- Título: Abstracts
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
PATTARO, R et al. Luminescence centers in porous silicon. 1995, Anais.. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 07 jun. 2025. -
APA
Pattaro, R., Matvienko, B., Guimaraes, F., & Basmaji, P. (1995). Luminescence centers in porous silicon. In Abstracts. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Pattaro R, Matvienko B, Guimaraes F, Basmaji P. Luminescence centers in porous silicon. Abstracts. 1995 ;[citado 2025 jun. 07 ] -
Vancouver
Pattaro R, Matvienko B, Guimaraes F, Basmaji P. Luminescence centers in porous silicon. Abstracts. 1995 ;[citado 2025 jun. 07 ] - Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces
- Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures
- Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Propriedades oticas de heteroestruturas semicondutoras de 'IN''GA''AS' / 'GA''AS' crescidas nas direcoes [100] e [311]
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
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