Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC
- Unidade: IFSC
- DOI: 10.1016/0038-1101(95)00382-7
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Solid-State Electronics
- Volume/Número/Paginação/Ano: v.40, p.659-63, 1996
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures. Solid-State Electronics, v. 40, p. 659-63, 1996Tradução . . Disponível em: https://doi.org/10.1016/0038-1101(95)00382-7. Acesso em: 24 jan. 2026. -
APA
Guimarães, F. E. G., González-Borrero, P. P., Lubyshev, D. I., & Basmaji, P. (1996). Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures. Solid-State Electronics, 40, 659-63. doi:10.1016/0038-1101(95)00382-7 -
NLM
Guimarães FEG, González-Borrero PP, Lubyshev DI, Basmaji P. Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures [Internet]. Solid-State Electronics. 1996 ;40 659-63.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1016/0038-1101(95)00382-7 -
Vancouver
Guimarães FEG, González-Borrero PP, Lubyshev DI, Basmaji P. Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures [Internet]. Solid-State Electronics. 1996 ;40 659-63.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1016/0038-1101(95)00382-7 - Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures
- Luminescence centers in porous silicon
- Propriedades oticas de heteroestruturas semicondutoras de 'IN''GA''AS' / 'GA''AS' crescidas nas direcoes [100] e [311]
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces
- Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
Informações sobre o DOI: 10.1016/0038-1101(95)00382-7 (Fonte: oaDOI API)
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