Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstracts
- Conference titles: International Conference on the Physics of Semiconductors
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ABNT
GUSEV, G M; GENNSER, U; MAUDE, D K; et al. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. Anais.. Vancouver: [s.n.], 1994. -
APA
Gusev, G. M., Gennser, U., Maude, D. K., Portal, J. C., Rossi, J. C., Lubyshev, D. I., & Basmaji, P. (1994). Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. In Abstracts. Vancouver. -
NLM
Gusev GM, Gennser U, Maude DK, Portal JC, Rossi JC, Lubyshev DI, Basmaji P. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. Abstracts. 1994 ; -
Vancouver
Gusev GM, Gennser U, Maude DK, Portal JC, Rossi JC, Lubyshev DI, Basmaji P. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. Abstracts. 1994 ; - Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy
- Highlights and selected aspects of the development of molecular beam epitaxy: perspective and future directions
- Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic field -induced localization in a two-dimensional array of quantum dots
- Wire crystals 'GA''AS' and 'IN''AS' grown by mbe on porous silicon
- Diode based on the 2d electron gas in an artificial, strongly disordered potential
- Surface phonon and 'E IND.1' gap shift observe in 'IN''AS' wire crystals on porous 'SI'
- Charge transfer between percolation levels in a system with an artificial , strongly disordered potential
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