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Artigo de periodico
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs (2010)
Morais, R R O; Dias, I F L; Duarte, J L; Laureto, E; Lourenço, S A; Silva, Euzi Conceição Fernandes da; Quivy, A. A.
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
MORAIS, R R O et al. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs. Brazilian Journal of Physics, v. 40, n. 1, p. 15-21, 2010Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332010000100003. Acesso em: 03 ago. 2024.
APA
Morais, R. R. O., Dias, I. F. L., Duarte, J. L., Laureto, E., Lourenço, S. A., Silva, E. C. F. da, & Quivy, A. A. (2010). Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs. Brazilian Journal of Physics, 40( 1), 15-21. doi:10.1590/s0103-97332010000100003
NLM
Morais RRO, Dias IFL, Duarte JL, Laureto E, Lourenço SA, Silva ECF da, Quivy AA. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs [Internet]. Brazilian Journal of Physics. 2010 ; 40( 1): 15-21.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1590/s0103-97332010000100003
Vancouver
Morais RRO, Dias IFL, Duarte JL, Laureto E, Lourenço SA, Silva ECF da, Quivy AA. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs [Internet]. Brazilian Journal of Physics. 2010 ; 40( 1): 15-21.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1590/s0103-97332010000100003
Trabalho de evento-anais periodico
Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction (2009)
Freitas, Raul de Oliveira; Diaz, Beatriz; Abramof, Eduardo; Quivy, A. A.; Morelhão, Sérgio Luiz
Source: Physica Status Solidi A - Applications and Materials Science. Conference titles: Biennial Conference on High Resolution X-Ray Diffraction and Imaging. Unidade: IF
Subjects: POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X
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ABNT
FREITAS, Raul de Oliveira et al. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART. Acesso em: 03 ago. 2024. , 2009
APA
Freitas, R. de O., Diaz, B., Abramof, E., Quivy, A. A., & Morelhão, S. L. (2009). Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART
NLM
Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 ago. 03 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART
Vancouver
Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 ago. 03 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART
Artigo de periodico
Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction (2009)
Freitas, Raul de Oliveira; Quivy, A. A.; Morelhão, Sérgio Luiz
Source: Journal of Applied Physics,. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X
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ABNT
FREITAS, Raul de Oliveira e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics, v. 105, n. 3, p. 036104-1/-03104/3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3074376. Acesso em: 03 ago. 2024.
APA
Freitas, R. de O., Quivy, A. A., & Morelhão, S. L. (2009). Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics,, 105( 3), 036104-1/-03104/3. doi:10.1063/1.3074376
NLM
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.3074376
Vancouver
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.3074376
Artigo de periodico
Classical and quantum magnetoresistance in a two-subband electron system (2009)
Mammani, Niko Churata; Gusev, Guennadii Michailovich; Silva, Euzi Conceicao Fernandes da; Raichev, O E; Quivy, A. A.; Bakarov, A K
Source: Physical Review B. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
MAMMANI, Niko Churata et al. Classical and quantum magnetoresistance in a two-subband electron system. Physical Review B, v. 80, n. 7, p. 085304-1/085304-5, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal. Acesso em: 03 ago. 2024.
APA
Mammani, N. C., Gusev, G. M., Silva, E. C. F. da, Raichev, O. E., Quivy, A. A., & Bakarov, A. K. (2009). Classical and quantum magnetoresistance in a two-subband electron system. Physical Review B, 80( 7), 085304-1/085304-5. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal
NLM
Mammani NC, Gusev GM, Silva ECF da, Raichev OE, Quivy AA, Bakarov AK. Classical and quantum magnetoresistance in a two-subband electron system [Internet]. Physical Review B. 2009 ; 80( 7): 085304-1/085304-5.[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal
Vancouver
Mammani NC, Gusev GM, Silva ECF da, Raichev OE, Quivy AA, Bakarov AK. Classical and quantum magnetoresistance in a two-subband electron system [Internet]. Physical Review B. 2009 ; 80( 7): 085304-1/085304-5.[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal
Artigo de periodico
The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells (2008)
Silva, M A T da; Morais, R R O; Dias, I F L; Lourenço, S A; Duarte, J L; Laureto, E; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da
Source: Journal of Physics-Condensed Matter. Unidade: IF
Subjects: SEMICONDUTORES, ESPALHAMENTO
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ABNT
SILVA, M A T da et al. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, v. 20, n. 25, p. 255246/1-255246/9, 2008Tradução . . Disponível em: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d. Acesso em: 03 ago. 2024.
APA
Silva, M. A. T. da, Morais, R. R. O., Dias, I. F. L., Lourenço, S. A., Duarte, J. L., Laureto, E., et al. (2008). The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, 20( 25), 255246/1-255246/9. Recuperado de http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d
NLM
Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2024 ago. 03 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d
Vancouver
Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2024 ago. 03 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d
Artigo de periodico
Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots (2008)
Pagnossin, Ivan Ramos; Meikap, A K; Quivy, A. A.; Gusev, Guennadii Michailovich
Source: Journal of Applied Physics. Unidade: IF
Subjects: FILMES FINOS, POÇOS QUÂNTICOS
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ABNT
PAGNOSSIN, Ivan Ramos et al. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots. Journal of Applied Physics, v. 104, n. 7, p. 073723/1-073723/6, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2996034. Acesso em: 03 ago. 2024.
APA
Pagnossin, I. R., Meikap, A. K., Quivy, A. A., & Gusev, G. M. (2008). Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots. Journal of Applied Physics, 104( 7), 073723/1-073723/6. doi:10.1063/1.2996034
NLM
Pagnossin IR, Meikap AK, Quivy AA, Gusev GM. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots [Internet]. Journal of Applied Physics. 2008 ; 104( 7): 073723/1-073723/6.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2996034
Vancouver
Pagnossin IR, Meikap AK, Quivy AA, Gusev GM. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots [Internet]. Journal of Applied Physics. 2008 ; 104( 7): 073723/1-073723/6.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2996034
Artigo de periodico
Landau-level crossing in two-subband systems in a tilted magnetic field (2007)
Duarte, C A; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: Physical Review B. Unidade: IF
Subjects: POÇOS QUÂNTICOS, EFEITO HALL
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ABNT
DUARTE, C A et al. Landau-level crossing in two-subband systems in a tilted magnetic field. Physical Review B, v. 76, n. 7, p. 075346/1-075346/8, 2007Tradução . . Disponível em: https://doi.org/10.1103/physrevb.76.075346. Acesso em: 03 ago. 2024.
APA
Duarte, C. A., Gusev, G. M., Quivy, A. A., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2007). Landau-level crossing in two-subband systems in a tilted magnetic field. Physical Review B, 76( 7), 075346/1-075346/8. doi:10.1103/physrevb.76.075346
NLM
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Bakarov AK, Portal JC. Landau-level crossing in two-subband systems in a tilted magnetic field [Internet]. Physical Review B. 2007 ; 76( 7): 075346/1-075346/8.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1103/physrevb.76.075346
Vancouver
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Bakarov AK, Portal JC. Landau-level crossing in two-subband systems in a tilted magnetic field [Internet]. Physical Review B. 2007 ; 76( 7): 075346/1-075346/8.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1103/physrevb.76.075346
Artigo de periodico
Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system (2007)
Freitas, Raul de Oliveira; Lamas, T. E.; Quivy, A. A.; Morelhão, Sérgio Luiz
Source: Physica Status Solidi A - Application and Materials Science. Unidade: IF
Assunto: SUPERFÍCIE FÍSICA
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ABNT
FREITAS, Raul de Oliveira et al. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system. Physica Status Solidi A - Application and Materials Science, v. 204, n. 8, p. 2548-2454, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssa.200675673. Acesso em: 03 ago. 2024.
APA
Freitas, R. de O., Lamas, T. E., Quivy, A. A., & Morelhão, S. L. (2007). Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system. Physica Status Solidi A - Application and Materials Science, 204( 8), 2548-2454. doi:10.1002/pssa.200675673
NLM
Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system [Internet]. Physica Status Solidi A - Application and Materials Science. 2007 ; 204( 8): 2548-2454.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1002/pssa.200675673
Vancouver
Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system [Internet]. Physica Status Solidi A - Application and Materials Science. 2007 ; 204( 8): 2548-2454.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1002/pssa.200675673
Trabalho de evento-anais periodico
In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat (2007)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Marques, E B
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, EPITAXIA POR FEIXE MOLECULAR
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ABNT
MARTINI, S et al. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal. Acesso em: 03 ago. 2024. , 2007
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Marques, E. B. (2007). In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
NLM
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Vancouver
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Artigo de periodico
Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells (2007)
Ortiz de Zevallos, Angela M; Cano, Nilo Francisco; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Portal, J C
Source: Physical Review B. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
ORTIZ DE ZEVALLOS, Angela M et al. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells. Physical Review B, v. 75, n. 20, p. 205324/1-205324/8, 2007Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal. Acesso em: 03 ago. 2024.
APA
Ortiz de Zevallos, A. M., Cano, N. F., Gusev, G. M., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2007). Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells. Physical Review B, 75( 20), 205324/1-205324/8. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
NLM
Ortiz de Zevallos AM, Cano NF, Gusev GM, Quivy AA, Lamas TE, Portal JC. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells [Internet]. Physical Review B. 2007 ; 75( 20): 205324/1-205324/8.[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
Vancouver
Ortiz de Zevallos AM, Cano NF, Gusev GM, Quivy AA, Lamas TE, Portal JC. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells [Internet]. Physical Review B. 2007 ; 75( 20): 205324/1-205324/8.[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
Artigo de periodico
Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells (2007)
Cunha, J F R; Silva, S W da; Morais, P C; Lamas, T. E.; Quivy, A. A.
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
CUNHA, J F R et al. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, v. 102, n. 4, p. 0437048/1-043704/6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2769963. Acesso em: 03 ago. 2024.
APA
Cunha, J. F. R., Silva, S. W. da, Morais, P. C., Lamas, T. E., & Quivy, A. A. (2007). Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, 102( 4), 0437048/1-043704/6. doi:10.1063/1.2769963
NLM
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2769963
Vancouver
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2769963
Artigo de periodico
The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy (2007)
Rudno-Rudziñski, W; Sek, G; Misiewicz, J; Lamas, T. E.; Quivy, A. A.
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, EFEITO MOSSBAUER, LASER
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ABNT
RUDNO-RUDZIÑSKI, W et al. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, v. 101, n. 7, p. 0735018/1-073518/4, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2714686. Acesso em: 03 ago. 2024.
APA
Rudno-Rudziñski, W., Sek, G., Misiewicz, J., Lamas, T. E., & Quivy, A. A. (2007). The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, 101( 7), 0735018/1-073518/4. doi:10.1063/1.2714686
NLM
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2714686
Vancouver
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2714686
Artigo de periodico
High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition (2006)
Szafraniec, J; Tsao, S; Zhang, W; Lim, H; Taguchi, M; Quivy, A. A.; Movaghar, B; Razeghi, M
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS
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ABNT
SZAFRANIEC, J et al. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, v. 88, n. 12, p. 121102/1-121102/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2188056. Acesso em: 03 ago. 2024.
APA
Szafraniec, J., Tsao, S., Zhang, W., Lim, H., Taguchi, M., Quivy, A. A., et al. (2006). High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, 88( 12), 121102/1-121102/3. doi:10.1063/1.2188056
NLM
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2188056
Vancouver
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2188056
Artigo de periodico
Electric field controlled g-factor in parabolic well determined by transport measurements (2006)
Duarte, Cesário Antonio; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Portal, J C
Source: Physica E-Low-Dimensional Systems & Nanostructures. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
DUARTE, Cesário Antonio et al. Electric field controlled g-factor in parabolic well determined by transport measurements. Physica E-Low-Dimensional Systems & Nanostructures, v. 34, n. 1-2, p. 329-332, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2006.03.086. Acesso em: 03 ago. 2024.
APA
Duarte, C. A., Gusev, G. M., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2006). Electric field controlled g-factor in parabolic well determined by transport measurements. Physica E-Low-Dimensional Systems & Nanostructures, 34( 1-2), 329-332. doi:10.1016/j.physe.2006.03.086
NLM
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Portal JC. Electric field controlled g-factor in parabolic well determined by transport measurements [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 329-332.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.physe.2006.03.086
Vancouver
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Portal JC. Electric field controlled g-factor in parabolic well determined by transport measurements [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 329-332.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.physe.2006.03.086
Artigo de periodico
Gain and recombination dynamics of quantum-dot infrared photodetectors (2006)
Lim, H; Movaghar, B; Tsao , S; Taguchi, M; Zhang, W; Quivy, A. A.; Razeghi, M
Source: Physical Review B. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LIM, H et al. Gain and recombination dynamics of quantum-dot infrared photodetectors. Physical Review B, v. 74, n. 20, p. 205321/1-205321/8, 2006Tradução . . Disponível em: https://doi.org/10.1103/physrevb.74.205321. Acesso em: 03 ago. 2024.
APA
Lim, H., Movaghar, B., Tsao , S., Taguchi, M., Zhang, W., Quivy, A. A., & Razeghi, M. (2006). Gain and recombination dynamics of quantum-dot infrared photodetectors. Physical Review B, 74( 20), 205321/1-205321/8. doi:10.1103/physrevb.74.205321
NLM
Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy AA, Razeghi M. Gain and recombination dynamics of quantum-dot infrared photodetectors [Internet]. Physical Review B. 2006 ; 74( 20): 205321/1-205321/8.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1103/physrevb.74.205321
Vancouver
Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy AA, Razeghi M. Gain and recombination dynamics of quantum-dot infrared photodetectors [Internet]. Physical Review B. 2006 ; 74( 20): 205321/1-205321/8.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1103/physrevb.74.205321
Artigo de periodico
Spin valve effect and Hall resistance in a wide parabolic well (2006)
Duarte, Cesário Antonio; Quivy, A. A.; Lamas, T E; Gusev, G M
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, EFEITO HALL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DUARTE, Cesário Antonio et al. Spin valve effect and Hall resistance in a wide parabolic well. Brazilian Journal of Physics, v. 36, n. 2A, p. 488-491, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000300068. Acesso em: 03 ago. 2024.
APA
Duarte, C. A., Quivy, A. A., Lamas, T. E., & Gusev, G. M. (2006). Spin valve effect and Hall resistance in a wide parabolic well. Brazilian Journal of Physics, 36( 2A), 488-491. doi:10.1590/s0103-97332006000300068
NLM
Duarte CA, Quivy AA, Lamas TE, Gusev GM. Spin valve effect and Hall resistance in a wide parabolic well [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 488-491.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1590/s0103-97332006000300068
Vancouver
Duarte CA, Quivy AA, Lamas TE, Gusev GM. Spin valve effect and Hall resistance in a wide parabolic well [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 488-491.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1590/s0103-97332006000300068
Artigo de periodico
InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications (2006)
Lamas, T E; Quivy, A. A.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAMAS, T E e QUIVY, A. A. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications. Brazilian Journal of Physics, v. 36, n. 2A, p. 405-407, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000300046. Acesso em: 03 ago. 2024.
APA
Lamas, T. E., & Quivy, A. A. (2006). InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications. Brazilian Journal of Physics, 36( 2A), 405-407. doi:10.1590/s0103-97332006000300046
NLM
Lamas TE, Quivy AA. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 405-407.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1590/s0103-97332006000300046
Vancouver
Lamas TE, Quivy AA. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 405-407.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1590/s0103-97332006000300046
Artigo de periodico
Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots (2006)
Gusev, Guennadii Michailovich; Sotomayor, N M; Seabra, Antonio Carlos ; Quivy, A. A.; Lamas, T. E.; Portal, J C
Source: Physica E-Low-Dimensional Systems & Nanostructures. Unidades: IF, EP
Subjects: POÇOS QUÂNTICOS, EFEITO HALL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, Guennadii Michailovich et al. Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, v. 34, n. 1-2, p. 504-507, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2006.03.097. Acesso em: 03 ago. 2024.
APA
Gusev, G. M., Sotomayor, N. M., Seabra, A. C., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2006). Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, 34( 1-2), 504-507. doi:10.1016/j.physe.2006.03.097
NLM
Gusev GM, Sotomayor NM, Seabra AC, Quivy AA, Lamas TE, Portal JC. Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 504-507.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.physe.2006.03.097
Vancouver
Gusev GM, Sotomayor NM, Seabra AC, Quivy AA, Lamas TE, Portal JC. Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 504-507.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.physe.2006.03.097
Artigo de periodico
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 (2005)
Monte, A F G; Cunha, J F R; Soler, M A P; Silva, S W; Quivy, A. A.; Morais, P C
Source: Microelectronics Journal. Unidade: IF
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MONTE, A F G et al. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3. Microelectronics Journal, v. 36, n. 3-6, p. 194-196, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.003. Acesso em: 03 ago. 2024.
APA
Monte, A. F. G., Cunha, J. F. R., Soler, M. A. P., Silva, S. W., Quivy, A. A., & Morais, P. C. (2005). Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3. Microelectronics Journal, 36( 3-6), 194-196. doi:10.1016/j.mejo.2005.02.003
NLM
Monte AFG, Cunha JFR, Soler MAP, Silva SW, Quivy AA, Morais PC. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 194-196.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.003
Vancouver
Monte AFG, Cunha JFR, Soler MAP, Silva SW, Quivy AA, Morais PC. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 194-196.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.003
Artigo de periodico
Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant (2005)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Thin Solid Films. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATERIAIS, EFEITO HALL, FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAMAS, T. E. et al. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, v. 474, n. 1-2, p. 25-30, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2004.08.004. Acesso em: 03 ago. 2024.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2005). Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, 474( 1-2), 25-30. doi:10.1016/j.tsf.2004.08.004
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004

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