Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction (2009)
- Authors:
- USP affiliated author: QUIVY, ALAIN ANDRE - IF
- School: IF
- DOI: 10.1063/1.3074376
- Subjects: SEMICONDUTORES; POÇOS QUÂNTICOS; DIFRAÇÃO POR RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics,
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 105, n. 3, p. 036104-1/-03104/3
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
FREITAS, Raul de Oliveira; QUIVY, A. A.; MORELHÃO, Sérgio Luiz. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics,, Melville, v. 105, n. 3, p. 036104-1/-03104/3, 2009. Disponível em: < http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000003036104000001&idtype=cvips&prog=normal > DOI: 10.1063/1.3074376. -
APA
Freitas, R. de O., Quivy, A. A., & Morelhão, S. L. (2009). Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics,, 105( 3), 036104-1/-03104/3. doi:10.1063/1.3074376 -
NLM
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000003036104000001&idtype=cvips&prog=normal -
Vancouver
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000003036104000001&idtype=cvips&prog=normal - Influence of barrier height and thickness on temperature dependence of excitonic transitions in coupled double quantum wells of 'Al IND.x' 'Ga IND.1-x' As/GaAs
- Optical properties in `In IND.0.2´`Ga IND.0.8´ As=GaAs superlattices grown on (001) GaAs substrates
- Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power
- Calculation of two-dimensional scattering patterns for oriented systems
- Influência das flutuações da composição química das barreiras sobre as recombinações excitônicas em poços quânticos de 'Al IND.X' Ga IND.1-X' As/GaAs
- Crescimento epitaxial por feixe molecular: da física ao dispositivo
- Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
- The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy
- Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers
- Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m
Informações sobre o DOI: 10.1063/1.3074376 (Fonte: oaDOI API)
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