Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells (2007)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1063/1.2769963
- Subjects: POÇOS QUÂNTICOS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 102, n. 4, p. 0437048/1-043704/6, 2007
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
CUNHA, J F R et al. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, v. 102, n. 4, p. 0437048/1-043704/6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2769963. Acesso em: 22 jan. 2026. -
APA
Cunha, J. F. R., Silva, S. W. da, Morais, P. C., Lamas, T. E., & Quivy, A. A. (2007). Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, 102( 4), 0437048/1-043704/6. doi:10.1063/1.2769963 -
NLM
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1063/1.2769963 -
Vancouver
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1063/1.2769963 - Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer
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Informações sobre o DOI: 10.1063/1.2769963 (Fonte: oaDOI API)
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