InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications (2006)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1590/s0103-97332006000300046
- Subjects: MATÉRIA CONDENSADA; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Brazilian Journal of Physics
- ISSN: 0103-9733
- Volume/Número/Paginação/Ano: v. 36, n. 2A, p. 405-407, 2006
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
- Licença: cc-by-nc
-
ABNT
LAMAS, T E; QUIVY, A. A. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications. Brazilian Journal of Physics, São Paulo, SBF, v. 36, n. 2A, p. 405-407, 2006. Disponível em: < http://www.scielo.br/pdf/bjp/v36n2a/a46v362a.pdf > DOI: 10.1590/s0103-97332006000300046. -
APA
Lamas, T. E., & Quivy, A. A. (2006). InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications. Brazilian Journal of Physics, 36( 2A), 405-407. doi:10.1590/s0103-97332006000300046 -
NLM
Lamas TE, Quivy AA. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 405-407.Available from: http://www.scielo.br/pdf/bjp/v36n2a/a46v362a.pdf -
Vancouver
Lamas TE, Quivy AA. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 405-407.Available from: http://www.scielo.br/pdf/bjp/v36n2a/a46v362a.pdf - p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant
- Microscopio de tonelamento operando no ar
- Programa de controle e tratamento de dados para um microscopio de tunelamento
- Influência das flutuações da composição química das barreiras sobre as recombinações excitônicas em poços quânticos de 'Al IND.X' Ga IND.1-X' As/GaAs
- Calculation of two-dimensional scattering patterns for oriented systems
- High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates
- Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m
- Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers
- Influence of barrier height and thickness on temperature dependence of excitonic transitions in coupled double quantum wells of 'Al IND.x' 'Ga IND.1-x' As/GaAs
- Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power
Informações sobre o DOI: 10.1590/s0103-97332006000300046 (Fonte: oaDOI API)
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