InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications (2006)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1590/s0103-97332006000300046
- Subjects: MATÉRIA CONDENSADA; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- ISSN: 0103-9733
- Volume/Número/Paginação/Ano: v. 36, n. 2A, p. 405-407, 2006
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
LAMAS, T E e QUIVY, Alain André. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications. Brazilian Journal of Physics, v. 36, n. 2A, p. 405-407, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000300046. Acesso em: 22 jan. 2026. -
APA
Lamas, T. E., & Quivy, A. A. (2006). InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications. Brazilian Journal of Physics, 36( 2A), 405-407. doi:10.1590/s0103-97332006000300046 -
NLM
Lamas TE, Quivy AA. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 405-407.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1590/s0103-97332006000300046 -
Vancouver
Lamas TE, Quivy AA. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 405-407.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1590/s0103-97332006000300046 - Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer
- Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells
- Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates
- In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy
- Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m
- Campo de deformação de pontos quânticos de InAs em um substrato de GaAs (001) por varredura Renninger de Raios-X síncrotron
- Interplay between direct gap renormalization and intervalley scattering in 'Al IND.X' 'Ga IND.1-X'As near the 'gama'-X crossover
- Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells
- The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy
- Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots
Informações sobre o DOI: 10.1590/s0103-97332006000300046 (Fonte: oaDOI API)
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