Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots (2013)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1016/j.jlumin.2012.12.062
- Subjects: LUMINESCÊNCIA; LASER
- Language: Inglês
- Imprenta:
- Source:
- Título: JOURNAL OF LUMINESCENCE
- Volume/Número/Paginação/Ano: v. 137, p. 22-27, mai.2013
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
FRANCHELLO, Flavio et al. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots. JOURNAL OF LUMINESCENCE, v. 137, p. 22-27, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2012.12.062. Acesso em: 23 jan. 2026. -
APA
Franchello, F., Souza, L. D. de, Laureto, E., Dias, I. F. L., Duarte, J. L., & Quivy, A. A. (2013). Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots. JOURNAL OF LUMINESCENCE, 137, 22-27. doi:10.1016/j.jlumin.2012.12.062 -
NLM
Franchello F, Souza LD de, Laureto E, Dias IFL, Duarte JL, Quivy AA. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots [Internet]. JOURNAL OF LUMINESCENCE. 2013 ; 137 22-27.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/j.jlumin.2012.12.062 -
Vancouver
Franchello F, Souza LD de, Laureto E, Dias IFL, Duarte JL, Quivy AA. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots [Internet]. JOURNAL OF LUMINESCENCE. 2013 ; 137 22-27.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/j.jlumin.2012.12.062 - Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer
- Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells
- Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates
- In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy
- Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m
- InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
- Campo de deformação de pontos quânticos de InAs em um substrato de GaAs (001) por varredura Renninger de Raios-X síncrotron
- Interplay between direct gap renormalization and intervalley scattering in 'Al IND.X' 'Ga IND.1-X'As near the 'gama'-X crossover
- Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells
- The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy
Informações sobre o DOI: 10.1016/j.jlumin.2012.12.062 (Fonte: oaDOI API)
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