The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy (2007)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1063/1.2714686
- Subjects: POÇOS QUÂNTICOS; EFEITO MOSSBAUER; LASER
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 101, n. 7, p. 0735018/1-073518/4, 2007
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
RUDNO-RUDZIÑSKI, W et al. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, v. 101, n. 7, p. 0735018/1-073518/4, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2714686. Acesso em: 05 jan. 2026. -
APA
Rudno-Rudziñski, W., Sek, G., Misiewicz, J., Lamas, T. E., & Quivy, A. A. (2007). The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, 101( 7), 0735018/1-073518/4. doi:10.1063/1.2714686 -
NLM
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2026 jan. 05 ] Available from: https://doi.org/10.1063/1.2714686 -
Vancouver
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2026 jan. 05 ] Available from: https://doi.org/10.1063/1.2714686 - Competition between the In/Ga intermixing and the electronic coupling effects in self-assembled InAs/GaAs double-quantum-dots
- Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100)
- Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots
- Photoluminescence Study of Self-Assembled Quantum Dots of 'IN''AS'
- Growth and characterization of distributed bragg reflectors (dbrs) for the fabrication of optical devices
- Análise do Circuito de Retroação de um Microscópio de Tunelamento(STM)
- AFM and PL characterization of the continous evolution cycle of MBE-grown self-assembled InAs quantum dots
- Scanning tunneling microscopy as a tool for doping studies in semiconductors
- Anti-cruzamento das sub-bandas de buracos em poços quânticos de GaAs/AlGaAs sob pressão biaxial
- Investigation of interdot carrier transfer in vertically stacked self-assembled 'IN''AS'/'GA'AS' double-quantum-dots grown on 'GA''AS' (100)
Informações sobre o DOI: 10.1063/1.2714686 (Fonte: oaDOI API)
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