Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots (2011)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: SPIN
- Language: Inglês
- Imprenta:
- Publisher: UFJF
- Publisher place: Juiz de Fora
- Date published: 2011
- Source:
- Título: Resumo
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
HENRIQUES, André Bohomoletz et al. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf. Acesso em: 30 dez. 2025. -
APA
Henriques, A. B., Maia, A. D. B., Schwan, A., Quivy, A. A., Yakovlev, D. R., & Bayer, M. (2011). Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf -
NLM
Henriques AB, Maia ADB, Schwan A, Quivy AA, Yakovlev DR, Bayer M. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots [Internet]. Resumo. 2011 ;[citado 2025 dez. 30 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf -
Vancouver
Henriques AB, Maia ADB, Schwan A, Quivy AA, Yakovlev DR, Bayer M. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots [Internet]. Resumo. 2011 ;[citado 2025 dez. 30 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf - Competition between the In/Ga intermixing and the electronic coupling effects in self-assembled InAs/GaAs double-quantum-dots
- Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100)
- Photoluminescence Study of Self-Assembled Quantum Dots of 'IN''AS'
- Growth and characterization of distributed bragg reflectors (dbrs) for the fabrication of optical devices
- Análise do Circuito de Retroação de um Microscópio de Tunelamento(STM)
- AFM and PL characterization of the continous evolution cycle of MBE-grown self-assembled InAs quantum dots
- Scanning tunneling microscopy as a tool for doping studies in semiconductors
- Anti-cruzamento das sub-bandas de buracos em poços quânticos de GaAs/AlGaAs sob pressão biaxial
- Investigation of interdot carrier transfer in vertically stacked self-assembled 'IN''AS'/'GA'AS' double-quantum-dots grown on 'GA''AS' (100)
- Optical characterization of self-assembled quantum dots of InAs by photoreflectance
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
