AFM and PL characterization of the continous evolution cycle of MBE-grown self-assembled InAs quantum dots (2000)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
SILVA, M. J. da e QUIVY, Alain André. AFM and PL characterization of the continous evolution cycle of MBE-grown self-assembled InAs quantum dots. 2000, Anais.. São Paulo: SBF, 2000. . Acesso em: 30 dez. 2025. -
APA
Silva, M. J. da, & Quivy, A. A. (2000). AFM and PL characterization of the continous evolution cycle of MBE-grown self-assembled InAs quantum dots. In Resumos. São Paulo: SBF. -
NLM
Silva MJ da, Quivy AA. AFM and PL characterization of the continous evolution cycle of MBE-grown self-assembled InAs quantum dots. Resumos. 2000 ;[citado 2025 dez. 30 ] -
Vancouver
Silva MJ da, Quivy AA. AFM and PL characterization of the continous evolution cycle of MBE-grown self-assembled InAs quantum dots. Resumos. 2000 ;[citado 2025 dez. 30 ] - Competition between the In/Ga intermixing and the electronic coupling effects in self-assembled InAs/GaAs double-quantum-dots
- Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100)
- Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots
- Photoluminescence Study of Self-Assembled Quantum Dots of 'IN''AS'
- Growth and characterization of distributed bragg reflectors (dbrs) for the fabrication of optical devices
- Análise do Circuito de Retroação de um Microscópio de Tunelamento(STM)
- Scanning tunneling microscopy as a tool for doping studies in semiconductors
- Anti-cruzamento das sub-bandas de buracos em poços quânticos de GaAs/AlGaAs sob pressão biaxial
- Investigation of interdot carrier transfer in vertically stacked self-assembled 'IN''AS'/'GA'AS' double-quantum-dots grown on 'GA''AS' (100)
- Optical characterization of self-assembled quantum dots of InAs by photoreflectance
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