Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates (2001)
- Authors:
- USP affiliated author: QUIVY, ALAIN ANDRE - IF
- School: IF
- Subjects: SUPERFÍCIE FÍSICA; SEMICONDUTORES; ÓPTICA; ESPECTROSCOPIA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physica Status Solidi A - Applied Research
- ISSN: 0031-8965
- Volume/Número/Paginação/Ano: v. 187, n. 1, p. 253-256, 2001
-
ABNT
SALES, F V de; SOLER, M A G; UGARTE, D; et al. Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates. Physica Status Solidi A - Applied Research, Berlin, v. 187, n. 1, p. 253-256, 2001. Disponível em: < http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512456&PLACEBO=IE.pdf >. -
APA
Sales, F. V. de, Soler, M. A. G., Ugarte, D., Quivy, A. A., Silva, S. W. da, Martini, S., & Morais, P. C. (2001). Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates. Physica Status Solidi A - Applied Research, 187( 1), 253-256. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512456&PLACEBO=IE.pdf -
NLM
Sales FV de, Soler MAG, Ugarte D, Quivy AA, Silva SW da, Martini S, Morais PC. Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates [Internet]. Physica Status Solidi A - Applied Research. 2001 ; 187( 1): 253-256.Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512456&PLACEBO=IE.pdf -
Vancouver
Sales FV de, Soler MAG, Ugarte D, Quivy AA, Silva SW da, Martini S, Morais PC. Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates [Internet]. Physica Status Solidi A - Applied Research. 2001 ; 187( 1): 253-256.Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512456&PLACEBO=IE.pdf - Influence of barrier height and thickness on temperature dependence of excitonic transitions in coupled double quantum wells of 'Al IND.x' 'Ga IND.1-x' As/GaAs
- Optical properties in `In IND.0.2´`Ga IND.0.8´ As=GaAs superlattices grown on (001) GaAs substrates
- Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power
- Calculation of two-dimensional scattering patterns for oriented systems
- Influência das flutuações da composição química das barreiras sobre as recombinações excitônicas em poços quânticos de 'Al IND.X' Ga IND.1-X' As/GaAs
- Crescimento epitaxial por feixe molecular: da física ao dispositivo
- Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
- The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy
- Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers
- Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m
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| Tipo | Nome | Link | |
|---|---|---|---|
 | 1521-396X(200109)187_1_25... |
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