Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots (2008)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; GOUSSEV, GUENNADII MIKHAILOVITCH - IF
- Unidade: IF
- DOI: 10.1063/1.2996034
- Subjects: FILMES FINOS; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 104, n. 7, p. 073723/1-073723/6, 2008
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PAGNOSSIN, Ivan Ramos et al. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots. Journal of Applied Physics, v. 104, n. 7, p. 073723/1-073723/6, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2996034. Acesso em: 19 abr. 2024. -
APA
Pagnossin, I. R., Meikap, A. K., Quivy, A. A., & Gusev, G. M. (2008). Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots. Journal of Applied Physics, 104( 7), 073723/1-073723/6. doi:10.1063/1.2996034 -
NLM
Pagnossin IR, Meikap AK, Quivy AA, Gusev GM. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots [Internet]. Journal of Applied Physics. 2008 ; 104( 7): 073723/1-073723/6.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.2996034 -
Vancouver
Pagnossin IR, Meikap AK, Quivy AA, Gusev GM. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots [Internet]. Journal of Applied Physics. 2008 ; 104( 7): 073723/1-073723/6.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.2996034 - Spin valve effect and Hall resistance in a wide parabolic well
- Spin valve effect and Hall resistance in a wide parabolic well
- Variação do coeficiente Hall em poços parabalólicos largos de 'Al IND.x''Ga IND. x-1' As em função do campo magnético
- Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well
- Magnetotransport in "Al IND.X" "Ga IND.X-1" As quantum wells with different potential shapes
- Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells
- Magnetotransport of a hole gas in parabolic quantum wells grown on GaAs(311)A substrates in
- Landau-level crossing in two-subband systems in a tilted magnetic field
- Electric field controlled g-factor in parabolic well determined by transport measurements
- High electron-mobility layers grown by molecular beam epitaxy of III-V compounds
Informações sobre o DOI: 10.1063/1.2996034 (Fonte: oaDOI API)
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