The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells (2008)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; ESPALHAMENTO
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Physics-Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 20, n. 25, p. 255246/1-255246/9, 2008
-
ABNT
SILVA, M A T da et al. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, v. 20, n. 25, p. 255246/1-255246/9, 2008Tradução . . Disponível em: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d. Acesso em: 14 out. 2024. -
APA
Silva, M. A. T. da, Morais, R. R. O., Dias, I. F. L., Lourenço, S. A., Duarte, J. L., Laureto, E., et al. (2008). The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, 20( 25), 255246/1-255246/9. Recuperado de http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d -
NLM
Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2024 out. 14 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d -
Vancouver
Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2024 out. 14 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d - Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
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- Growth, processing and testing of infrared photodetectors based on quantum dots
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- Mid-Infrared (3-5 µm) photodetection in AlGaAs/GaAs QWIPs using photo-induced noise
- Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots
- Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors
- Studies of the radiative recombination processes in 'BE' - 'GAMA' doped 'GA''AS' structures
- Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots
- Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells
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