Filtros : "Indexado no Chemical Abstracts" "EP-PSI" Removidos: "FCF002" "KRIEGER, JOSE EDUARDO" "Saraiva" Limpar

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  • Source: International Journal of Food Science and Technology. Unidades: EP, FCF

    Subjects: PLASMA, OXIGÊNIO, MICROBIOLOGIA

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      BOSCARIOL, Michelle Rigamonti et al. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology, v. 43, n. 5, p. 170-175, 2008Tradução . . Acesso em: 16 nov. 2024.
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      Boscariol, M. R., Moreira, A. J., Mansano, R. D., Kikuchi, I. S., & Pinto, T. de J. A. (2008). Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology, 43( 5), 170-175.
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      Boscariol MR, Moreira AJ, Mansano RD, Kikuchi IS, Pinto T de JA. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology. 2008 ;43( 5): 170-175.[citado 2024 nov. 16 ]
    • Vancouver

      Boscariol MR, Moreira AJ, Mansano RD, Kikuchi IS, Pinto T de JA. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology. 2008 ;43( 5): 170-175.[citado 2024 nov. 16 ]
  • Source: Sensors and Actuators B - Chemical. Unidades: EP, IQ

    Subjects: VOLTAMETRIA, ELETRODEPOSIÇÃO, ELETROQUÍMICA

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      LOWINSOHN, Denise et al. Design and fabrication of a microelectrode array for iodate quantification in small sample volumes. Sensors and Actuators B - Chemical, v. 113, n. 1, p. 80-87, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.snb.2005.02.024. Acesso em: 16 nov. 2024.
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      Lowinsohn, D., Peres, H. E. M., Kosminsky, L., Paixão, T. R. L. C. da, Ferreira, T. L., Ramírez Fernandez, F. J., & Bertotti, M. (2006). Design and fabrication of a microelectrode array for iodate quantification in small sample volumes. Sensors and Actuators B - Chemical, 113( 1), 80-87. doi:10.1016/j.snb.2005.02.024
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      Lowinsohn D, Peres HEM, Kosminsky L, Paixão TRLC da, Ferreira TL, Ramírez Fernandez FJ, Bertotti M. Design and fabrication of a microelectrode array for iodate quantification in small sample volumes [Internet]. Sensors and Actuators B - Chemical. 2006 ; 113( 1): 80-87.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.snb.2005.02.024
    • Vancouver

      Lowinsohn D, Peres HEM, Kosminsky L, Paixão TRLC da, Ferreira TL, Ramírez Fernandez FJ, Bertotti M. Design and fabrication of a microelectrode array for iodate quantification in small sample volumes [Internet]. Sensors and Actuators B - Chemical. 2006 ; 113( 1): 80-87.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.snb.2005.02.024
  • Source: Brazilian Journal of Physics. Unidades: FFCLRP, EP

    Subjects: TRANSISTORES, SENSORES BIOMÉDICOS

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      BATISTA, P. D. et al. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics, v. 36, n. 2A, p. 478-481, 2006Tradução . . Acesso em: 16 nov. 2024.
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      Batista, P. D., Graeff, C. F. de O., Ramírez Fernandez, F. J., & Marques, F. das C. (2006). Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics, 36( 2A), 478-481.
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      Batista PD, Graeff CF de O, Ramírez Fernandez FJ, Marques F das C. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics. 2006 ; 36( 2A): 478-481.[citado 2024 nov. 16 ]
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      Batista PD, Graeff CF de O, Ramírez Fernandez FJ, Marques F das C. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics. 2006 ; 36( 2A): 478-481.[citado 2024 nov. 16 ]
  • Source: Sensors and Actuators B - Chemical. Unidades: IQ, EP

    Subjects: FILMES FINOS, COMPOSTOS ORGÂNICOS

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      CARVALHO, Alexsander Tressino de et al. Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates. Sensors and Actuators B - Chemical, v. 108, n. 1-2, p. 947-954, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.snb.2004.11.065. Acesso em: 16 nov. 2024.
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      Carvalho, A. T. de, Silva, M. L. P. da, Nascimento Filho, A. P. do, Jesus, D. P. de, & Santos Filho, S. G. dos. (2005). Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates. Sensors and Actuators B - Chemical, 108( 1-2), 947-954. doi:10.1016/j.snb.2004.11.065
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      Carvalho AT de, Silva MLP da, Nascimento Filho AP do, Jesus DP de, Santos Filho SG dos. Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates [Internet]. Sensors and Actuators B - Chemical. 2005 ; 108( 1-2): 947-954.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.snb.2004.11.065
    • Vancouver

      Carvalho AT de, Silva MLP da, Nascimento Filho AP do, Jesus DP de, Santos Filho SG dos. Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates [Internet]. Sensors and Actuators B - Chemical. 2005 ; 108( 1-2): 947-954.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.snb.2004.11.065
  • Source: Applied Surface Science. Unidades: FCF, EP

    Subjects: PLASMA, OXIGÊNIO, MICROBIOLOGIA

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      MOREIRA, Adir José et al. Sterilization by oxygen plasma. Applied Surface Science, v. 235, n. 1-2, p. 151-155, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2004.05.128. Acesso em: 16 nov. 2024.
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      Moreira, A. J., Mansano, R. D., Pinto, T. de J. A., Ruas, R., Zambon, L. da S., Silva, M. V. da, & Verdonck, P. B. (2004). Sterilization by oxygen plasma. Applied Surface Science, 235( 1-2), 151-155. doi:10.1016/j.apsusc.2004.05.128
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      Moreira AJ, Mansano RD, Pinto T de JA, Ruas R, Zambon L da S, Silva MV da, Verdonck PB. Sterilization by oxygen plasma [Internet]. Applied Surface Science. 2004 ; 235( 1-2): 151-155.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.apsusc.2004.05.128
    • Vancouver

      Moreira AJ, Mansano RD, Pinto T de JA, Ruas R, Zambon L da S, Silva MV da, Verdonck PB. Sterilization by oxygen plasma [Internet]. Applied Surface Science. 2004 ; 235( 1-2): 151-155.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.apsusc.2004.05.128
  • Source: Sensor Letters. Unidades: EP, IFSC

    Assunto: FILMES FINOS

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      CONSTANTINO, Carlos José Leopoldo et al. Nanostructured films of perylene derivatives: high performance materials for taste sensor applications. Sensor Letters, v. 2, n. 2, p. 95-101, 2004Tradução . . Acesso em: 16 nov. 2024.
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      Constantino, C. J. L., Antunes, P. A., Venâncio, E. C., Consolin, N., Fonseca, F. J., Mattoso, L. H. C., et al. (2004). Nanostructured films of perylene derivatives: high performance materials for taste sensor applications. Sensor Letters, 2( 2), 95-101.
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      Constantino CJL, Antunes PA, Venâncio EC, Consolin N, Fonseca FJ, Mattoso LHC, Aroca RF, Oliveira Junior ON de, Riul Junior A. Nanostructured films of perylene derivatives: high performance materials for taste sensor applications. Sensor Letters. 2004 ; 2( 2): 95-101.[citado 2024 nov. 16 ]
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      Constantino CJL, Antunes PA, Venâncio EC, Consolin N, Fonseca FJ, Mattoso LHC, Aroca RF, Oliveira Junior ON de, Riul Junior A. Nanostructured films of perylene derivatives: high performance materials for taste sensor applications. Sensor Letters. 2004 ; 2( 2): 95-101.[citado 2024 nov. 16 ]
  • Source: Diamond and Related Materials. Unidades: EESC, EP

    Subjects: FILMES FINOS, CORROSÃO DOS MATERIAIS, AÇO INOXIDÁVEL

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      MANSANO, Ronaldo Domingues et al. Protective carbon layer for chemical corrosion of stainless steel. Diamond and Related Materials, v. 12, n. 3-7, p. 749-752, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0925-9635(02)00270-4. Acesso em: 16 nov. 2024.
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      Mansano, R. D., Massi, M., Santos, A. P. M. dos, Zambom, L. da S., & Gonçalves Neto, L. (2003). Protective carbon layer for chemical corrosion of stainless steel. Diamond and Related Materials, 12( 3-7), 749-752. doi:10.1016/s0925-9635(02)00270-4
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      Mansano RD, Massi M, Santos APM dos, Zambom L da S, Gonçalves Neto L. Protective carbon layer for chemical corrosion of stainless steel [Internet]. Diamond and Related Materials. 2003 ; 12( 3-7): 749-752.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0925-9635(02)00270-4
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      Mansano RD, Massi M, Santos APM dos, Zambom L da S, Gonçalves Neto L. Protective carbon layer for chemical corrosion of stainless steel [Internet]. Diamond and Related Materials. 2003 ; 12( 3-7): 749-752.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0925-9635(02)00270-4
  • Source: Sensors and Actuators B : Chemical. Unidade: EP

    Subjects: POLIMERIZAÇÃO, PLASMA

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      NASCIMENTO FILHO, Antonio Pereira do et al. Use of plasma polymerized highly polar organic compound films for sensor development. Sensors and Actuators B : Chemical, v. 91, n. 1-3, p. 370-377, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0925-4005(03)00111-4. Acesso em: 16 nov. 2024.
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      Nascimento Filho, A. P. do, Silva, M. L. P. da, Galeazzo, E., & Demarquette, N. R. (2003). Use of plasma polymerized highly polar organic compound films for sensor development. Sensors and Actuators B : Chemical, 91( 1-3), 370-377. doi:10.1016/s0925-4005(03)00111-4
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      Nascimento Filho AP do, Silva MLP da, Galeazzo E, Demarquette NR. Use of plasma polymerized highly polar organic compound films for sensor development [Internet]. Sensors and Actuators B : Chemical. 2003 ; 91( 1-3): 370-377.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0925-4005(03)00111-4
    • Vancouver

      Nascimento Filho AP do, Silva MLP da, Galeazzo E, Demarquette NR. Use of plasma polymerized highly polar organic compound films for sensor development [Internet]. Sensors and Actuators B : Chemical. 2003 ; 91( 1-3): 370-377.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0925-4005(03)00111-4
  • Source: Thin Solid Films. Unidade: EP

    Subjects: MATERIAIS (PROPRIEDADES MECÂNICAS), MATERIAIS (PROPRIEDADES PLÁSTICAS), ÓXIDO NÍTRICO

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      GUIMARÃES, Marcelo Silva et al. Mechanical and thermophysical properties of PECVD oxynitride films measured by mems. Thin Solid Films, v. no 2001, p. 626-631, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(01)01329-3. Acesso em: 16 nov. 2024.
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      Guimarães, M. S., Sinatora, A., Aloyo, M. I., Pereyra, I., & Páez Carreño, M. N. (2001). Mechanical and thermophysical properties of PECVD oxynitride films measured by mems. Thin Solid Films, no 2001, 626-631. doi:10.1016/s0040-6090(01)01329-3
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      Guimarães MS, Sinatora A, Aloyo MI, Pereyra I, Páez Carreño MN. Mechanical and thermophysical properties of PECVD oxynitride films measured by mems [Internet]. Thin Solid Films. 2001 ; no 2001 626-631.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0040-6090(01)01329-3
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      Guimarães MS, Sinatora A, Aloyo MI, Pereyra I, Páez Carreño MN. Mechanical and thermophysical properties of PECVD oxynitride films measured by mems [Internet]. Thin Solid Films. 2001 ; no 2001 626-631.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0040-6090(01)01329-3
  • Source: IEEE Transactions on Education. Unidade: EP

    Assunto: ENGENHARIA ELÉTRICA (EDUCAÇÃO)

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      CONSONNI, Denise e SEABRA, Antonio Carlos. A modern approach to teaching basic experimental Electricity and Electronics. IEEE Transactions on Education, v. 44, n. 1, p. 5-15, 2001Tradução . . Disponível em: https://doi.org/10.1109/13.912704. Acesso em: 16 nov. 2024.
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      Consonni, D., & Seabra, A. C. (2001). A modern approach to teaching basic experimental Electricity and Electronics. IEEE Transactions on Education, 44( 1), 5-15. doi:10.1109/13.912704
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      Consonni D, Seabra AC. A modern approach to teaching basic experimental Electricity and Electronics [Internet]. IEEE Transactions on Education. 2001 ; 44( 1): 5-15.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1109/13.912704
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      Consonni D, Seabra AC. A modern approach to teaching basic experimental Electricity and Electronics [Internet]. IEEE Transactions on Education. 2001 ; 44( 1): 5-15.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1109/13.912704
  • Source: Applied Optics. Unidades: EESC, EP

    Assunto: ÓPTICA

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      GONÇALVES NETO, Luiz et al. Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle. Applied Optics, v. 40, n. Ja 2001, p. 211-218, 2001Tradução . . Disponível em: https://doi.org/10.1364/ao.40.000211. Acesso em: 16 nov. 2024.
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      Gonçalves Neto, L., Roberto, L. B., Verdonck, P. B., Mansano, R. D., Cirino, G. A., & Stefani, M. A. (2001). Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle. Applied Optics, 40( Ja 2001), 211-218. doi:10.1364/ao.40.000211
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      Gonçalves Neto L, Roberto LB, Verdonck PB, Mansano RD, Cirino GA, Stefani MA. Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle [Internet]. Applied Optics. 2001 ; 40( Ja 2001): 211-218.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1364/ao.40.000211
    • Vancouver

      Gonçalves Neto L, Roberto LB, Verdonck PB, Mansano RD, Cirino GA, Stefani MA. Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle [Internet]. Applied Optics. 2001 ; 40( Ja 2001): 211-218.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1364/ao.40.000211
  • Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      NICOLETT, Aparecido Sirley et al. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, v. No 2000, n. 11, p. 1961-1969, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00166-0. Acesso em: 16 nov. 2024.
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      Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, No 2000( 11), 1961-1969. doi:10.1016/s0038-1101(00)00166-0
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      Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
    • Vancouver

      Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
  • Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      PAVANELLO, Marcelo Antonio et al. Analog performance and application of graded-channel fully depleted SOI MOSFETs. Solid-State Electronics, v. 44, n. 7, p. 1219-1222, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00034-4. Acesso em: 16 nov. 2024.
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      Pavanello, M. A., Martino, J. A., Dessard, V., & Flandre, D. (2000). Analog performance and application of graded-channel fully depleted SOI MOSFETs. Solid-State Electronics, 44( 7), 1219-1222. doi:10.1016/s0038-1101(00)00034-4
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      Pavanello MA, Martino JA, Dessard V, Flandre D. Analog performance and application of graded-channel fully depleted SOI MOSFETs [Internet]. Solid-State Electronics. 2000 ; 44( 7): 1219-1222.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(00)00034-4
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      Pavanello MA, Martino JA, Dessard V, Flandre D. Analog performance and application of graded-channel fully depleted SOI MOSFETs [Internet]. Solid-State Electronics. 2000 ; 44( 7): 1219-1222.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(00)00034-4
  • Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects. Solid-State Electronics, v. 44, n. 6, p. 917-922, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00032-0. Acesso em: 16 nov. 2024.
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      Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects. Solid-State Electronics, 44( 6), 917-922. doi:10.1016/s0038-1101(00)00032-0
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      Pavanello MA, Martino JA, Flandre D. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects [Internet]. Solid-State Electronics. 2000 ; 44( 6): 917-922.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(00)00032-0
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      Pavanello MA, Martino JA, Flandre D. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects [Internet]. Solid-State Electronics. 2000 ; 44( 6): 917-922.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(00)00032-0
  • Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      NICOLETT, Aparecido Sirley et al. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect. Solid-State Electronics, v. 44, n. 4, p. 677-684, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00293-2. Acesso em: 16 nov. 2024.
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      Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect. Solid-State Electronics, 44( 4), 677-684. doi:10.1016/s0038-1101(99)00293-2
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      Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect [Internet]. Solid-State Electronics. 2000 ; 44( 4): 677-684.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(99)00293-2
    • Vancouver

      Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect [Internet]. Solid-State Electronics. 2000 ; 44( 4): 677-684.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0038-1101(99)00293-2
  • Source: Thin Solid Films. Unidade: EP

    Assunto: FILMES

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      MANSANO, Ronaldo Domingues et al. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering. Thin Solid Films, n. 373, p. 243-246, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(00)01088-9. Acesso em: 16 nov. 2024.
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      Mansano, R. D., Massi, M., Zambom, L. da S., Verdonck, P. B., Nogueira, P. M., Maciel, H. S., & Otani, C. (2000). Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering. Thin Solid Films, ( 373), 243-246. doi:10.1016/s0040-6090(00)01088-9
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      Mansano RD, Massi M, Zambom L da S, Verdonck PB, Nogueira PM, Maciel HS, Otani C. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering [Internet]. Thin Solid Films. 2000 ;( 373): 243-246.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0040-6090(00)01088-9
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      Mansano RD, Massi M, Zambom L da S, Verdonck PB, Nogueira PM, Maciel HS, Otani C. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering [Internet]. Thin Solid Films. 2000 ;( 373): 243-246.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0040-6090(00)01088-9
  • Source: IEEE Transactions on Signal Processing. Unidade: EP

    Assunto: FILTROS ELÉTRICOS DIGITAIS

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      NASCIMENTO, Vítor Heloiz e SAYED, Ali Hussein. Unbiased and stable leakage-based adaptive filters. IEEE Transactions on Signal Processing, v. 47, n. 12, p. 3261-3276, 1999Tradução . . Disponível em: https://doi.org/10.1109/78.806071. Acesso em: 16 nov. 2024.
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      Nascimento, V. H., & Sayed, A. H. (1999). Unbiased and stable leakage-based adaptive filters. IEEE Transactions on Signal Processing, 47( 12), 3261-3276. doi:10.1109/78.806071
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      Nascimento VH, Sayed AH. Unbiased and stable leakage-based adaptive filters [Internet]. IEEE Transactions on Signal Processing. 1999 ; 47( 12): 3261-3276.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1109/78.806071
    • Vancouver

      Nascimento VH, Sayed AH. Unbiased and stable leakage-based adaptive filters [Internet]. IEEE Transactions on Signal Processing. 1999 ; 47( 12): 3261-3276.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1109/78.806071
  • Source: Thin Solid Films. Unidade: EP

    Assunto: FILMES FINOS

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      ZAMBOM, Luís da Silva et al. LPCVD deposition of silicon nitride assisted by high density plasmas. Thin Solid Films, v. 343-344, p. 299-301, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(98)01587-9. Acesso em: 16 nov. 2024.
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      Zambom, L. da S., Mansano, R. D., Furlan, R., & Verdonck, P. B. (1999). LPCVD deposition of silicon nitride assisted by high density plasmas. Thin Solid Films, 343-344, 299-301. doi:10.1016/s0040-6090(98)01587-9
    • NLM

      Zambom L da S, Mansano RD, Furlan R, Verdonck PB. LPCVD deposition of silicon nitride assisted by high density plasmas [Internet]. Thin Solid Films. 1999 ; 343-344 299-301.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0040-6090(98)01587-9
    • Vancouver

      Zambom L da S, Mansano RD, Furlan R, Verdonck PB. LPCVD deposition of silicon nitride assisted by high density plasmas [Internet]. Thin Solid Films. 1999 ; 343-344 299-301.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0040-6090(98)01587-9
  • Source: Vaccum. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, Homero Santiago. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Vaccum, v. 48, n. 7-9, p. 677-679, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0042-207x(97)00067-5. Acesso em: 16 nov. 2024.
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      Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1997). Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Vaccum, 48( 7-9), 677-679. doi:10.1016/s0042-207x(97)00067-5
    • NLM

      Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas [Internet]. Vaccum. 1997 ; 48( 7-9): 677-679.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0042-207x(97)00067-5
    • Vancouver

      Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas [Internet]. Vaccum. 1997 ; 48( 7-9): 677-679.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0042-207x(97)00067-5
  • Source: Materials Research Society Symposium Proceedings. Unidade: EP

    Assunto: DISPOSITIVOS ELETRÔNICOS

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      MARTINS, R. et al. The role of the species formed in PECVD systems on the density of state of a Si:H films. Materials Research Society Symposium Proceedings, v. 192, p. 175-180, 1990Tradução . . Acesso em: 16 nov. 2024.
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      Martins, R., Vieira, M., Fortunato, E., Santos, M., Dirani, E. A. T., Carvalho, N., et al. (1990). The role of the species formed in PECVD systems on the density of state of a Si:H films. Materials Research Society Symposium Proceedings, 192, 175-180.
    • NLM

      Martins R, Vieira M, Fortunato E, Santos M, Dirani EAT, Carvalho N, Baia I, Guimarães I. The role of the species formed in PECVD systems on the density of state of a Si:H films. Materials Research Society Symposium Proceedings. 1990 ; 192 175-180.[citado 2024 nov. 16 ]
    • Vancouver

      Martins R, Vieira M, Fortunato E, Santos M, Dirani EAT, Carvalho N, Baia I, Guimarães I. The role of the species formed in PECVD systems on the density of state of a Si:H films. Materials Research Society Symposium Proceedings. 1990 ; 192 175-180.[citado 2024 nov. 16 ]

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