Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers (1990)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFQSC ; LI, MAXIMO SIU - IFQSC ; HIPOLITO, OSCAR - IFQSC
- Unidade: IFQSC
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstracts
- Conference titles: International Conference on Physic of Electro-optic microstructures and microdevices
-
ABNT
BERNUSSI, A. A. et al. Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers. 1990, Anais.. Crete: , Universidade de São Paulo, 1990. . Acesso em: 19 abr. 2024. -
APA
Bernussi, A. A., Brum, J. A., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers. In Abstracts. Crete: , Universidade de São Paulo. -
NLM
Bernussi AA, Brum JA, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers. Abstracts. 1990 ;[citado 2024 abr. 19 ] -
Vancouver
Bernussi AA, Brum JA, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers. Abstracts. 1990 ;[citado 2024 abr. 19 ] - Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'
- Optical interband transitions in single and periodically delta-doped 'GA''AS' samples
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'
- Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'
- Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
- Photoreflectance spectra of periodically 'DELTA'-doped 'SI': 'GA''AS'
- Preparation and characterization of 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' samples grown by molecular beam epitaxy
- Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well
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