Selenium delta doped in almost single monolayer grown by molecular beam epitaxy (1991)
- Autor:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; LI, MAXIMO SIU - IFSC ; HIPOLITO, OSCAR - IFSC
- Unidade: IFSC
- Subjects: SELÊNIO; TEMPERATURA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Proceedings
- Conference titles: Brazilian School on Semicondutores Physics
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ABNT
NOTARI, A. C. Selenium delta doped in almost single monolayer grown by molecular beam epitaxy. 1991, Anais.. São Paulo: Instituto de Física de São Carlos, Universidade de São Paulo, 1991. . Acesso em: 19 set. 2024. -
APA
Notari, A. C. (1991). Selenium delta doped in almost single monolayer grown by molecular beam epitaxy. In Proceedings. São Paulo: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Notari AC. Selenium delta doped in almost single monolayer grown by molecular beam epitaxy. Proceedings. 1991 ;[citado 2024 set. 19 ] -
Vancouver
Notari AC. Selenium delta doped in almost single monolayer grown by molecular beam epitaxy. Proceedings. 1991 ;[citado 2024 set. 19 ] - Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
- Photoreflectance spectra of periodically 'DELTA'-doped 'SI': 'GA''AS'
- Preparation and characterization of 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' samples grown by molecular beam epitaxy
- Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'
- Optical interband transitions in single and periodically delta-doped 'GA''AS' samples
- Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
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