Optical interband transitions in single and periodically delta-doped 'GA''AS' samples (1990)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC ; LI, MAXIMO SIU - IFSC
- Unidade: IFSC
- DOI: 10.4028/www.scientific.net/MSF.65-66.67
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título: Materials Science Forum
- Volume/Número/Paginação/Ano: v.65-6, p.67-72, 1990
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
BERNUSSI, A A et al. Optical interband transitions in single and periodically delta-doped 'GA''AS' samples. Materials Science Forum, v. 65-6, p. 67-72, 1990Tradução . . Disponível em: https://doi.org/10.4028/www.scientific.net/MSF.65-66.67. Acesso em: 24 jan. 2026. -
APA
Bernussi, A. A., Brum, J. A., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Optical interband transitions in single and periodically delta-doped 'GA''AS' samples. Materials Science Forum, 65-6, 67-72. doi:10.4028/www.scientific.net/MSF.65-66.67 -
NLM
Bernussi AA, Brum JA, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Optical interband transitions in single and periodically delta-doped 'GA''AS' samples [Internet]. Materials Science Forum. 1990 ;65-6 67-72.[citado 2026 jan. 24 ] Available from: https://doi.org/10.4028/www.scientific.net/MSF.65-66.67 -
Vancouver
Bernussi AA, Brum JA, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Optical interband transitions in single and periodically delta-doped 'GA''AS' samples [Internet]. Materials Science Forum. 1990 ;65-6 67-72.[citado 2026 jan. 24 ] Available from: https://doi.org/10.4028/www.scientific.net/MSF.65-66.67 - Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Preparation and characterization of 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' samples grown by molecular beam epitaxy
- Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'
- Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'
- Photoreflectance spectra of periodically 'DELTA'-doped 'SI': 'GA''AS'
- Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
- Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'
Informações sobre o DOI: 10.4028/www.scientific.net/MSF.65-66.67 (Fonte: oaDOI API)
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