Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS' (1990)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC ; LI, MAXIMO SIU - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título: Bulletin of the American Physical Society
- Volume/Número/Paginação/Ano: v.35, n.3 , p.825, mar. 1990
- Conference titles: March Meeting
-
ABNT
BASMAJI, Pierre et al. Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'. Bulletin of the American Physical Society. [S.l.]: Instituto de Física de São Carlos, Universidade de São Paulo. Disponível em: https://repositorio.usp.br/directbitstream/2a46de5d-8655-4b41-aacc-3828ae76e361/PROD000096_816624.pdf. Acesso em: 13 mar. 2026. , 1990 -
APA
Basmaji, P., Siu Li, M., Hipólito, O., Ranz, E., & Portal, J. C. (1990). Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'. Bulletin of the American Physical Society. Instituto de Física de São Carlos, Universidade de São Paulo. Recuperado de https://repositorio.usp.br/directbitstream/2a46de5d-8655-4b41-aacc-3828ae76e361/PROD000096_816624.pdf -
NLM
Basmaji P, Siu Li M, Hipólito O, Ranz E, Portal JC. Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS' [Internet]. Bulletin of the American Physical Society. 1990 ;35( 3 ): 825.[citado 2026 mar. 13 ] Available from: https://repositorio.usp.br/directbitstream/2a46de5d-8655-4b41-aacc-3828ae76e361/PROD000096_816624.pdf -
Vancouver
Basmaji P, Siu Li M, Hipólito O, Ranz E, Portal JC. Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS' [Internet]. Bulletin of the American Physical Society. 1990 ;35( 3 ): 825.[citado 2026 mar. 13 ] Available from: https://repositorio.usp.br/directbitstream/2a46de5d-8655-4b41-aacc-3828ae76e361/PROD000096_816624.pdf - Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Preparation and characterization of 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' samples grown by molecular beam epitaxy
- Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'
- Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
- Photoreflectance spectra of periodically 'DELTA'-doped 'SI': 'GA''AS'
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Optical interband transitions in single and periodically delta-doped 'GA''AS' samples
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