Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy (1990)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC ; LI, MAXIMO SIU - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.358788
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v.67, n.9 , p.4149-51, mai. 1990
- Este artigo NÃO possui versão em acesso aberto
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Status: Nenhuma versão em acesso aberto identificada -
ABNT
BERNUSSI, A A et al. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics, v. 67, n. 9 , p. 4149-51, 1990Tradução . . Disponível em: https://doi.org/10.1063/1.358788. Acesso em: 11 mar. 2026. -
APA
Bernussi, A. A., Iikawa, F., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics, 67( 9 ), 4149-51. doi:10.1063/1.358788 -
NLM
Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy [Internet]. Journal of Applied Physics. 1990 ;67( 9 ): 4149-51.[citado 2026 mar. 11 ] Available from: https://doi.org/10.1063/1.358788 -
Vancouver
Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy [Internet]. Journal of Applied Physics. 1990 ;67( 9 ): 4149-51.[citado 2026 mar. 11 ] Available from: https://doi.org/10.1063/1.358788 - Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Preparation and characterization of 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' samples grown by molecular beam epitaxy
- Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'
- Photoreflectance spectra of periodically 'DELTA'-doped 'SI': 'GA''AS'
- Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Optical interband transitions in single and periodically delta-doped 'GA''AS' samples
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