Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI' (1990)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC ; LI, MAXIMO SIU - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Surface Science
- Volume/Número/Paginação/Ano: v.228, p.356-8, 1990
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ABNT
BASMAJI, Pierre et al. Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. Surface Science, v. 228, p. 356-8, 1990Tradução . . Acesso em: 25 set. 2024. -
APA
Basmaji, P., Ceschin, A. M., Siu Li, M., Hipólito, O., Bernussi, A. A., Iikawa, F., & Motisuke, P. (1990). Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. Surface Science, 228, 356-8. -
NLM
Basmaji P, Ceschin AM, Siu Li M, Hipólito O, Bernussi AA, Iikawa F, Motisuke P. Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. Surface Science. 1990 ;228 356-8.[citado 2024 set. 25 ] -
Vancouver
Basmaji P, Ceschin AM, Siu Li M, Hipólito O, Bernussi AA, Iikawa F, Motisuke P. Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. Surface Science. 1990 ;228 356-8.[citado 2024 set. 25 ] - Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
- Photoreflectance spectra of periodically 'DELTA'-doped 'SI': 'GA''AS'
- Preparation and characterization of 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' samples grown by molecular beam epitaxy
- Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'
- Optical interband transitions in single and periodically delta-doped 'GA''AS' samples
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
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