Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS' (1991)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC ; LI, MAXIMO SIU - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Source:
- Título: Bulletin of the American Physical Society
- Volume/Número/Paginação/Ano: v.36, n.7 , p.2001, jul./aug. 1991
- Conference titles: Interdisciplinary Laser Science Conference
-
ABNT
NOTARI, A C et al. Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'. Bulletin of the American Physical Society. [S.l.]: Instituto de Física de São Carlos, Universidade de São Paulo. Disponível em: https://repositorio.usp.br/directbitstream/85aab7ca-270f-4de6-89cc-bad326fb33ef/PROD000488_820208.pdf. Acesso em: 11 mar. 2026. , 1991 -
APA
Notari, A. C., Minondo, M., Schrappe, B., Siu Li, M., Basmaji, P., & Hipólito, O. (1991). Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'. Bulletin of the American Physical Society. Instituto de Física de São Carlos, Universidade de São Paulo. Recuperado de https://repositorio.usp.br/directbitstream/85aab7ca-270f-4de6-89cc-bad326fb33ef/PROD000488_820208.pdf -
NLM
Notari AC, Minondo M, Schrappe B, Siu Li M, Basmaji P, Hipólito O. Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS' [Internet]. Bulletin of the American Physical Society. 1991 ;36( 7 ): 2001.[citado 2026 mar. 11 ] Available from: https://repositorio.usp.br/directbitstream/85aab7ca-270f-4de6-89cc-bad326fb33ef/PROD000488_820208.pdf -
Vancouver
Notari AC, Minondo M, Schrappe B, Siu Li M, Basmaji P, Hipólito O. Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS' [Internet]. Bulletin of the American Physical Society. 1991 ;36( 7 ): 2001.[citado 2026 mar. 11 ] Available from: https://repositorio.usp.br/directbitstream/85aab7ca-270f-4de6-89cc-bad326fb33ef/PROD000488_820208.pdf - Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Preparation and characterization of 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' samples grown by molecular beam epitaxy
- Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
- Photoreflectance spectra of periodically 'DELTA'-doped 'SI': 'GA''AS'
- Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Optical interband transitions in single and periodically delta-doped 'GA''AS' samples
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