Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy (1992)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Crystal Growth
- Volume/Número/Paginação/Ano: v.116, p.518-20, 1992
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ABNT
NOTARI, A C et al. Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy. Journal of Crystal Growth, v. 116, p. 518-20, 1992Tradução . . Acesso em: 24 jan. 2026. -
APA
Notari, A. C., Schrappe, B. J., Basmaji, P., & Hipólito, O. (1992). Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy. Journal of Crystal Growth, 116, 518-20. -
NLM
Notari AC, Schrappe BJ, Basmaji P, Hipólito O. Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy. Journal of Crystal Growth. 1992 ;116 518-20.[citado 2026 jan. 24 ] -
Vancouver
Notari AC, Schrappe BJ, Basmaji P, Hipólito O. Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy. Journal of Crystal Growth. 1992 ;116 518-20.[citado 2026 jan. 24 ] - Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well
- Electric field induce delocalization in an aperiodic semiconductor heterostructure
- Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Resonance properties on periodic and aperiodic semiconductor heterostructure
- Electronic properties of an aperiodic semiconductor heterostructure
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Electric field induced delocalization in an aperiodic semiconductor heterostructure
- Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
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