Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well (1991)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- DOI: 10.1002/pssa.2211260233
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Physica Status Solidi a
- Volume/Número/Paginação/Ano: v.126, n.2 , p.k119-22, 1991
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
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ABNT
NOTARI, A C et al. Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well. Physica Status Solidi a, v. 126, n. 2 , p. k119-22, 1991Tradução . . Disponível em: https://doi.org/10.1002/pssa.2211260233. Acesso em: 25 jan. 2026. -
APA
Notari, A. C., Schrappe, B., Basmaji, P., & Hipólito, O. (1991). Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well. Physica Status Solidi a, 126( 2 ), k119-22. doi:10.1002/pssa.2211260233 -
NLM
Notari AC, Schrappe B, Basmaji P, Hipólito O. Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well [Internet]. Physica Status Solidi a. 1991 ;126( 2 ): k119-22.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1002/pssa.2211260233 -
Vancouver
Notari AC, Schrappe B, Basmaji P, Hipólito O. Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well [Internet]. Physica Status Solidi a. 1991 ;126( 2 ): k119-22.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1002/pssa.2211260233 - Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy
- Electric field induce delocalization in an aperiodic semiconductor heterostructure
- Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Resonance properties on periodic and aperiodic semiconductor heterostructure
- Electronic properties of an aperiodic semiconductor heterostructure
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Electric field induced delocalization in an aperiodic semiconductor heterostructure
- Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
Informações sobre o DOI: 10.1002/pssa.2211260233 (Fonte: oaDOI API)
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