Electric field induced delocalization in an aperiodic semiconductor heterostructure (1997)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; HIPOLITO, OSCAR - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27/A, n. 4, p. 308-311, 1997
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ABNT
BOSQUETTI, Diogenes et al. Electric field induced delocalization in an aperiodic semiconductor heterostructure. Brazilian Journal of Physics, v. 27/A, n. 4, p. 308-311, 1997Tradução . . Acesso em: 13 mar. 2026. -
APA
Bosquetti, D., Basmaji, P., Hipólito, O., & Marega Junior, E. (1997). Electric field induced delocalization in an aperiodic semiconductor heterostructure. Brazilian Journal of Physics, 27/A( 4), 308-311. -
NLM
Bosquetti D, Basmaji P, Hipólito O, Marega Junior E. Electric field induced delocalization in an aperiodic semiconductor heterostructure. Brazilian Journal of Physics. 1997 ; 27/A( 4): 308-311.[citado 2026 mar. 13 ] -
Vancouver
Bosquetti D, Basmaji P, Hipólito O, Marega Junior E. Electric field induced delocalization in an aperiodic semiconductor heterostructure. Brazilian Journal of Physics. 1997 ; 27/A( 4): 308-311.[citado 2026 mar. 13 ] - Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state
- Resonance properties on periodic and aperiodic semiconductor heterostructure
- Electronic properties of an aperiodic semiconductor heterostructure
- Electric field induce delocalization in an aperiodic semiconductor heterostructure
- Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy
- Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well
- Wannier excitons study in self-organised 'IN''GA''AS' quantum dots
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Estudo com poli metil metacrilato (PMMA) e preparação de superfícies semicondutoras voltadas à construção de dispositivos
- Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates
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