Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates (1998)
- Authors:
- USP affiliated authors: MAREGA JUNIOR, EUCLYDES - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Book of Abstracts
- Conference titles: International Conference on Supperlattices, Microructures, and Microdevices
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ABNT
PETITPREZ, Emmanuel et al. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1998, Anais.. Hurghada: Instituto de Física de São Carlos, Universidade de São Paulo, 1998. . Acesso em: 13 mar. 2026. -
APA
Petitprez, E., Moshegov, N., Marega Junior, E., Basmaji, P., Mazel, A., Fourmeaux, R., & Dorignac, D. (1998). Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. In Book of Abstracts. Hurghada: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Petitprez E, Moshegov N, Marega Junior E, Basmaji P, Mazel A, Fourmeaux R, Dorignac D. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. Book of Abstracts. 1998 ;[citado 2026 mar. 13 ] -
Vancouver
Petitprez E, Moshegov N, Marega Junior E, Basmaji P, Mazel A, Fourmeaux R, Dorignac D. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. Book of Abstracts. 1998 ;[citado 2026 mar. 13 ] - Wannier excitons study in self-organised 'IN''GA''AS' quantum dots
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Estudo com poli metil metacrilato (PMMA) e preparação de superfícies semicondutoras voltadas à construção de dispositivos
- Localized excitations in GaAs/AlAs superlattices grown on non(100) surfaces
- Study of surface kinetic effects in the mbe growth of iii-v compounds by rheed analysis
- Mbe growth and optical characterisation of self-organized 'IN''GA''AS' quantum dots based on high index planes
- Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces
- Análise do perfil gerado por ataque químico úmido em filme de GaAs, crescido sobre várias orientações
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates
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