Mbe growth and optical characterisation of self-organized 'IN''GA''AS' quantum dots based on high index planes (1995)
- Authors:
- USP affiliated authors: MAREGA JUNIOR, EUCLYDES - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Instituto Nacional de Pesquisas Espaciais - INPE
- Publisher place: São José dos Campos
- Date published: 1995
- Source:
- Título do periódico: Programa e Resumos
- Conference titles: Encontro da Sociedade Brasileira de Crescimento de Cristais
-
ABNT
LUBYSHEV, D. I. et al. Mbe growth and optical characterisation of self-organized 'IN''GA''AS' quantum dots based on high index planes. 1995, Anais.. São José dos Campos: Instituto Nacional de Pesquisas Espaciais - INPE, 1995. . Acesso em: 18 abr. 2024. -
APA
Lubyshev, D. I., Marega Júnior, E., González-Borrero, P. P., Petitprez, E., Charcappe, E. G., La Scala Junior, N., & Basmaji, P. (1995). Mbe growth and optical characterisation of self-organized 'IN''GA''AS' quantum dots based on high index planes. In Programa e Resumos. São José dos Campos: Instituto Nacional de Pesquisas Espaciais - INPE. -
NLM
Lubyshev DI, Marega Júnior E, González-Borrero PP, Petitprez E, Charcappe EG, La Scala Junior N, Basmaji P. Mbe growth and optical characterisation of self-organized 'IN''GA''AS' quantum dots based on high index planes. Programa e Resumos. 1995 ;[citado 2024 abr. 18 ] -
Vancouver
Lubyshev DI, Marega Júnior E, González-Borrero PP, Petitprez E, Charcappe EG, La Scala Junior N, Basmaji P. Mbe growth and optical characterisation of self-organized 'IN''GA''AS' quantum dots based on high index planes. Programa e Resumos. 1995 ;[citado 2024 abr. 18 ] - Surface kinetics effects at the mbe growth of iii-v compounds
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- Projeto e construcao de um sistema de vacuo para uso em espectroscopia de massa de particulas ionizadas (sims)
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'
- Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates
- Caracterização de nanoestruturas semicondutoras através de Técnica de Microscopia por Força Atômica (AFM)
- Análise do perfil gerado por ataque químico úmido em filme de GaAs, crescido sobre várias orientações
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
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