Resonance properties on periodic and aperiodic semiconductor heterostructure (1996)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
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ABNT
BOSQUETTI, D et al. Resonance properties on periodic and aperiodic semiconductor heterostructure. 1996, Anais.. São Paulo: Sbf, 1996. . Acesso em: 25 jan. 2026. -
APA
Bosquetti, D., Basmaji, P., Hipólito, O., & Marega Junior, E. (1996). Resonance properties on periodic and aperiodic semiconductor heterostructure. In Resumos. São Paulo: Sbf. -
NLM
Bosquetti D, Basmaji P, Hipólito O, Marega Junior E. Resonance properties on periodic and aperiodic semiconductor heterostructure. Resumos. 1996 ;[citado 2026 jan. 25 ] -
Vancouver
Bosquetti D, Basmaji P, Hipólito O, Marega Junior E. Resonance properties on periodic and aperiodic semiconductor heterostructure. Resumos. 1996 ;[citado 2026 jan. 25 ] - Electric field induce delocalization in an aperiodic semiconductor heterostructure
- Electronic properties of an aperiodic semiconductor heterostructure
- Electric field induced delocalization in an aperiodic semiconductor heterostructure
- Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state
- Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy
- Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well
- Propriedades oticas de super-redes de ('GA''AS') / ('AL''AS') crescidas nas direcoes (100) e (n11) a e b com n =1,2,3,5,7
- Photocurrent properties of 'DELTA-'si'' doped 'IN''GA''AS' multi-quantum well heterostructure
- Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots
- Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'
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