Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well (1991)
- Autores:
- Autores USP: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: SEMICONDUTORES
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Physica Status Solidi a
- Volume/Número/Paginação/Ano: v.126, n.2 , p.k119-22, 1991
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ABNT
NOTARI, A C et al. Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well. Physica Status Solidi a, v. 126, n. 2 , p. k119-22, 1991Tradução . . Acesso em: 24 abr. 2024. -
APA
Notari, A. C., Schrappe, B., Basmaji, P., & Hipólito, O. (1991). Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well. Physica Status Solidi a, 126( 2 ), k119-22. -
NLM
Notari AC, Schrappe B, Basmaji P, Hipólito O. Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well. Physica Status Solidi a. 1991 ;126( 2 ): k119-22.[citado 2024 abr. 24 ] -
Vancouver
Notari AC, Schrappe B, Basmaji P, Hipólito O. Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well. Physica Status Solidi a. 1991 ;126( 2 ): k119-22.[citado 2024 abr. 24 ] - Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy
- Mbe growth and characterization of periodically 'DELTA'-doped 'GA''AS'
- Optical interband transitions in single and periodically delta-doped 'GA''AS' samples
- Electric field induce delocalization in an aperiodic semiconductor heterostructure
- Selenium delta doped in almost single monolayer grown by molecular beam epitaxy
- Mbe growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'
- Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers
- Propriedades opticas e eletricas de 'DELTA' doped em 'GA''AS' crescido por epitaxia por feixes moleculares
- Diffusion studies and characterization of 'SE' 'DELTA'-doped 'GA''AS'
- Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state
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