Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application (2004)
- Authors:
- USP affiliated authors: FANTINI, MARCIA CARVALHO DE ABREU - IF ; ALVAREZ, INES PEREYRA DE - EP
- Unidades: IF; EP
- Subjects: FILMES FINOS; NANOTECNOLOGIA; ESTRUTURA DOS MATERIAIS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Non-Crystalline Solids
- ISSN: 0022-3093
- Volume/Número/Paginação/Ano: v. 338-340,
-
ABNT
ESCOBAR FORHAN, Neisy Amparo e FANTINI, Márcia Carvalho de Abreu e PEREYRA, Inés. Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application. Journal of Non-Crystalline Solids, v. 338-340, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXM-4CCFCKJ-1-8&_cdi=5594&_user=972067&_orig=browse&_coverDate=06%2F15%2F2004&_sk=996619999&view=c&wchp=dGLbVlz-zSkWz&md5=768c7876eb02ac94f3aa329920376045&ie=/sdarticle.pdf. Acesso em: 23 jan. 2026. -
APA
Escobar Forhan, N. A., Fantini, M. C. de A., & Pereyra, I. (2004). Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application. Journal of Non-Crystalline Solids, 338-340. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXM-4CCFCKJ-1-8&_cdi=5594&_user=972067&_orig=browse&_coverDate=06%2F15%2F2004&_sk=996619999&view=c&wchp=dGLbVlz-zSkWz&md5=768c7876eb02ac94f3aa329920376045&ie=/sdarticle.pdf -
NLM
Escobar Forhan NA, Fantini MC de A, Pereyra I. Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application [Internet]. Journal of Non-Crystalline Solids. 2004 ; 338-340[citado 2026 jan. 23 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXM-4CCFCKJ-1-8&_cdi=5594&_user=972067&_orig=browse&_coverDate=06%2F15%2F2004&_sk=996619999&view=c&wchp=dGLbVlz-zSkWz&md5=768c7876eb02ac94f3aa329920376045&ie=/sdarticle.pdf -
Vancouver
Escobar Forhan NA, Fantini MC de A, Pereyra I. Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application [Internet]. Journal of Non-Crystalline Solids. 2004 ; 338-340[citado 2026 jan. 23 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXM-4CCFCKJ-1-8&_cdi=5594&_user=972067&_orig=browse&_coverDate=06%2F15%2F2004&_sk=996619999&view=c&wchp=dGLbVlz-zSkWz&md5=768c7876eb02ac94f3aa329920376045&ie=/sdarticle.pdf - Exafs analysis on sioxny films
- Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors
- Structural and morphological investigation of amorphous hydrogenated silicon carbide
- Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H
- Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films
- Intrinsic and doped microcrystalline silicon films for application in double barrier structures
- Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application
- SAXS de filmes finos homogêneos de a-SiC:H
- EXAFS analysis on SiOxNy films
- Control of the refractive index in PECVD SiOxNy films
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