Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors (2004)
- Authors:
- USP affiliated authors: FANTINI, MARCIA CARVALHO DE ABREU - IF ; PEREYRA, INÊS - EP
- Unidades: IF; EP
- Subjects: MATERIAIS; FILMES FINOS
- Language: Inglês
- Imprenta:
- Publisher: SBPMat
- Publisher place: São Carlos
- Date published: 2004
- Source:
- Título: Program
- Conference titles: Encontro da SBPMat
-
ABNT
ALBERTIN, Katia Franklin e FANTINI, Márcia Carvalho de Abreu e PEREYRA, Inés. Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors. 2004, Anais.. São Carlos: SBPMat, 2004. Disponível em: http://www.sbpmat.org.br/3meeting/simposio_%20c.pdf. Acesso em: 22 jan. 2026. -
APA
Albertin, K. F., Fantini, M. C. de A., & Pereyra, I. (2004). Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors. In Program. São Carlos: SBPMat. Recuperado de http://www.sbpmat.org.br/3meeting/simposio_%20c.pdf -
NLM
Albertin KF, Fantini MC de A, Pereyra I. Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors [Internet]. Program. 2004 ;[citado 2026 jan. 22 ] Available from: http://www.sbpmat.org.br/3meeting/simposio_%20c.pdf -
Vancouver
Albertin KF, Fantini MC de A, Pereyra I. Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors [Internet]. Program. 2004 ;[citado 2026 jan. 22 ] Available from: http://www.sbpmat.org.br/3meeting/simposio_%20c.pdf - Exafs analysis on sioxny films
- Structural and morphological investigation of amorphous hydrogenated silicon carbide
- Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H
- Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films
- Intrinsic and doped microcrystalline silicon films for application in double barrier structures
- Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application
- SAXS de filmes finos homogêneos de a-SiC:H
- EXAFS analysis on SiOxNy films
- Control of the refractive index in PECVD SiOxNy films
- Caracterização química e morfológica de filmes Si'O IND.X' 'N IND.Y':H
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