Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H (2003)
- Authors:
- USP affiliated authors: FANTINI, MARCIA CARVALHO DE ABREU - IF ; ALVAREZ, INES PEREYRA DE - EP
- Unidades: IF; EP
- Assunto: FILMES FINOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Non-Crystalline Solids
- ISSN: 0022-3093
- Volume/Número/Paginação/Ano: v. 330, n. 1-3, p. 196-215, 2003
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ABNT
PRADO, J. R et al. Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H. Journal of Non-Crystalline Solids, v. 330, n. 1-3, p. 196-215, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5594&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0f8f94222ce407d33f3e1442abef58bd/. Acesso em: 19 set. 2024. -
APA
Prado, J. R., D'Addio, T. F., Fantini, M. C. de A., Pereyra, I., & Flank, A. M. (2003). Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H. Journal of Non-Crystalline Solids, 330( 1-3), 196-215. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5594&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0f8f94222ce407d33f3e1442abef58bd/ -
NLM
Prado JR, D'Addio TF, Fantini MC de A, Pereyra I, Flank AM. Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H [Internet]. Journal of Non-Crystalline Solids. 2003 ; 330( 1-3): 196-215.[citado 2024 set. 19 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5594&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0f8f94222ce407d33f3e1442abef58bd/ -
Vancouver
Prado JR, D'Addio TF, Fantini MC de A, Pereyra I, Flank AM. Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H [Internet]. Journal of Non-Crystalline Solids. 2003 ; 330( 1-3): 196-215.[citado 2024 set. 19 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5594&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0f8f94222ce407d33f3e1442abef58bd/ - On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films
- Structural investigation of Si-rich amorphous silicon oxynitride films
- Exafs analysis on sioxny films
- Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors
- Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films
- EXAFS analysis on SiOxNy films
- Intrinsic and doped microcrystalline silicon films for application in double barrier structures
- Caracterização química e morfológica de filmes Si'O IND.X' 'N IND.Y':H
- Estrutura de ordem local de filmes de oxi-nitreto de silício amorfo higrogenado
- Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis
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