Control of the refractive index in PECVD SiOxNy films (2000)
- Authors:
- USP affiliated authors: PEREYRA, INÊS - EP ; FANTINI, MARCIA CARVALHO DE ABREU - IF
- Unidades: EP; IF
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/UA/UFRGS/UNICAMP/USP
- Publisher place: Manaus
- Date published: 2000
- Source:
- Título: SBMicro 2000 : proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
ALAYO CHÁVEZ, Marco Isaías et al. Control of the refractive index in PECVD SiOxNy films. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 23 jan. 2026. -
APA
Alayo Chávez, M. I., Pereyra, I., Scopel, W. L., & Fantini, M. C. de A. (2000). Control of the refractive index in PECVD SiOxNy films. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP. -
NLM
Alayo Chávez MI, Pereyra I, Scopel WL, Fantini MC de A. Control of the refractive index in PECVD SiOxNy films. SBMicro 2000 : proceedings. 2000 ;[citado 2026 jan. 23 ] -
Vancouver
Alayo Chávez MI, Pereyra I, Scopel WL, Fantini MC de A. Control of the refractive index in PECVD SiOxNy films. SBMicro 2000 : proceedings. 2000 ;[citado 2026 jan. 23 ] - Exafs analysis on sioxny films
- Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors
- Structural and morphological investigation of amorphous hydrogenated silicon carbide
- Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H
- Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films
- Intrinsic and doped microcrystalline silicon films for application in double barrier structures
- Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application
- SAXS de filmes finos homogêneos de a-SiC:H
- EXAFS analysis on SiOxNy films
- Caracterização química e morfológica de filmes Si'O IND.X' 'N IND.Y':H
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