Control of the refractive index in PECVD SiOxNy films (2000)
- Authors:
- USP affiliated authors: PEREYRA, INÊS - EP ; FANTINI, MARCIA CARVALHO DE ABREU - IF
- Unidades: EP; IF
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/UA/UFRGS/UNICAMP/USP
- Publisher place: Manaus
- Date published: 2000
- Source:
- Título do periódico: SBMicro 2000 : proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
ALAYO CHÁVEZ, Marco Isaías et al. Control of the refractive index in PECVD SiOxNy films. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 19 set. 2024. -
APA
Alayo Chávez, M. I., Pereyra, I., Scopel, W. L., & Fantini, M. C. de A. (2000). Control of the refractive index in PECVD SiOxNy films. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP. -
NLM
Alayo Chávez MI, Pereyra I, Scopel WL, Fantini MC de A. Control of the refractive index in PECVD SiOxNy films. SBMicro 2000 : proceedings. 2000 ;[citado 2024 set. 19 ] -
Vancouver
Alayo Chávez MI, Pereyra I, Scopel WL, Fantini MC de A. Control of the refractive index in PECVD SiOxNy films. SBMicro 2000 : proceedings. 2000 ;[citado 2024 set. 19 ] - On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films
- Structural investigation of Si-rich amorphous silicon oxynitride films
- Exafs analysis on sioxny films
- Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors
- Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films
- EXAFS analysis on SiOxNy films
- Intrinsic and doped microcrystalline silicon films for application in double barrier structures
- Caracterização química e morfológica de filmes Si'O IND.X' 'N IND.Y':H
- Estrutura de ordem local de filmes de oxi-nitreto de silício amorfo higrogenado
- Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis
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