Intrinsic and doped microcrystalline silicon films for application in double barrier structures (1997)
- Authors:
- USP affiliated authors: FANTINI, MARCIA CARVALHO DE ABREU - IF ; ALVAREZ, INES PEREYRA DE - EP
- Unidades: IF; EP
- Assunto: FISICA APLICADA
- Language: Inglês
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27/A, n. 4, p. 105-109, 1997
-
ABNT
ZHENRUI, yu et al. Intrinsic and doped microcrystalline silicon films for application in double barrier structures. Brazilian Journal of Physics, v. 27/A, n. 4, p. 105-109, 1997Tradução . . Acesso em: 22 jan. 2026. -
APA
Zhenrui, yu, Paez Carreño, M. N., Pereyra, I., D`Addio-Fazzio, T. F., & Fantini, M. C. de A. (1997). Intrinsic and doped microcrystalline silicon films for application in double barrier structures. Brazilian Journal of Physics, 27/A( 4), 105-109. -
NLM
Zhenrui yu, Paez Carreño MN, Pereyra I, D`Addio-Fazzio TF, Fantini MC de A. Intrinsic and doped microcrystalline silicon films for application in double barrier structures. Brazilian Journal of Physics. 1997 ; 27/A( 4): 105-109.[citado 2026 jan. 22 ] -
Vancouver
Zhenrui yu, Paez Carreño MN, Pereyra I, D`Addio-Fazzio TF, Fantini MC de A. Intrinsic and doped microcrystalline silicon films for application in double barrier structures. Brazilian Journal of Physics. 1997 ; 27/A( 4): 105-109.[citado 2026 jan. 22 ] - Structural and morphological investigation of amorphous hydrogenated silicon carbide
- Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H
- Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films
- Caracterização química e morfológica de filmes Si'O IND.X' 'N IND.Y':H
- Estrutura de ordem local de filmes de oxi-nitreto de silício amorfo higrogenado
- Exafs analysis on sioxny films
- Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors
- Structural investigation of Si-rich amorphous silicon oxynitride films
- Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis
- On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films
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