Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis (2006)
- Authors:
- USP affiliated authors: FANTINI, MARCIA CARVALHO DE ABREU - IF ; PEREYRA, INÊS - EP
- Unidades: IF; EP
- Assunto: MATERIAIS
- Language: Inglês
- Imprenta:
- Publisher: SBPMat - Sociedade Brasileira de Pesquisa em Materiais
- Publisher place: Florianópolis
- Date published: 2006
- Source:
- Título: Abstracts
- Conference titles: Brazilian MRS Meeting
-
ABNT
ALBERTIN, Katia Franklin e FANTINI, Márcia Carvalho de Abreu e PEREYRA, Inés. Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis. 2006, Anais.. Florianópolis: SBPMat - Sociedade Brasileira de Pesquisa em Materiais, 2006. . Acesso em: 20 fev. 2026. -
APA
Albertin, K. F., Fantini, M. C. de A., & Pereyra, I. (2006). Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis. In Abstracts. Florianópolis: SBPMat - Sociedade Brasileira de Pesquisa em Materiais. -
NLM
Albertin KF, Fantini MC de A, Pereyra I. Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis. Abstracts. 2006 ;[citado 2026 fev. 20 ] -
Vancouver
Albertin KF, Fantini MC de A, Pereyra I. Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis. Abstracts. 2006 ;[citado 2026 fev. 20 ] - Exafs analysis on sioxny films
- Comparison of the structural properties of the PECVD SIOXNY dielectric layer with the interface electrical properties in SI/SIOXNY/AL capacitors
- Structural and morphological investigation of amorphous hydrogenated silicon carbide
- Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H
- Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films
- Structural investigation of Si-rich amorphous silicon oxynitride films
- On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films
- Intrinsic and doped microcrystalline silicon films for application in double barrier structures
- Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application
- SAXS de filmes finos homogêneos de a-SiC:H
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