New opportunities in X-ray characterization of semiconductors (2003)
- Autor:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; RAIOS X
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2003
- Source:
- Título: Book of Abstracts
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
MORELHÃO, Sérgio Luiz. New opportunities in X-ray characterization of semiconductors. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 14 fev. 2026. -
APA
Morelhão, S. L. (2003). New opportunities in X-ray characterization of semiconductors. In Book of Abstracts. Amsterdam: Elsevier Science. -
NLM
Morelhão SL. New opportunities in X-ray characterization of semiconductors. Book of Abstracts. 2003 ;[citado 2026 fev. 14 ] -
Vancouver
Morelhão SL. New opportunities in X-ray characterization of semiconductors. Book of Abstracts. 2003 ;[citado 2026 fev. 14 ] - Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors
- Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators
- Intrinsic spatial resolution limit of the analyzer-based X-ray phase contrast imaging technique
- Lateral lattice coherence lengths in thin lms of bismuth telluride topological insulators, with overview on polarization factors for X-ray dynamical di raction in monochromator crystals
- Dislocations in dendritic web silicon
- Investigação da polarização da radiação síncrotron por varredura "fi"
- Synchrotron radiation X-ray multiple diffraction in the study of doped KDP
- An x-ray diffractometer for accurate structural invariant phase determination
- Determinação do coeficiente piezoelétrico do cristal de KDP sando difração múltipla com fonte de radiação síncroton
- Automatic x-ray crystallographic phasing at LNLS
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